BTC2881E3 Datasheet, PDF (1/5 Pages) Cystech Electonics Corp. – Silicon NPN Epitaxial Planar Transistor

CYStech Electronics Corp.
Silicon NPN Epitaxial Planar Transistor
BTC2881E3
BVCEO
IC
RCESAT(MAX)
Spec. No. : C316E3
Issued Date : 2010.01.22
Revised Date : 2010.09.28
Page No. : 1/5
200V
1A
0.86Ω
Description
• High breakdown voltage, BVCEO≥ 200V
• Large continuous collector current capability
• Low collector saturation voltage
• RoHS compliant package
Symbol
BTC2881E3
Outline
TO-220
B：Base
C：Collector
E：Emitter
BCE
Absolute Maximum Ratings (Ta=25°C)
Parameter
Symbol Limits
Unit
Collector-Base Voltage
VCBO
300
V
Collector-Emitter Voltage
VCEO
200
V
Emitter-Base Voltage
VEBO
6
V
Collector Current
IC
1
A
Base Current
IB
0.2
A
Power Dissipation @TA=25℃
Power Dissipation @TC=25℃
2
W
PD
20
W
Operating Junction Temperature and Storage Temperature Range Tj ; Tstg -55~+150 °C
BTC2881E3
CYStek Product Specification