BTC2881E3 Datasheet, PDF (2/5 Pages) Cystech Electonics Corp. – Silicon NPN Epitaxial Planar Transistor

CYStech Electronics Corp.
Spec. No. : C316E3
Issued Date : 2010.01.22
Revised Date : 2010.09.28
Page No. : 2/5
Thermal Data
Parameter
Thermal Resistance, Junction-to-case, max
Thermal Resistance, Junction-to-ambient, max
Symbol
Rth,j-c
Rth,j-a
Value
6.25
62.5
Unit
°C/W
°C/W
Characteristics (Ta=25°C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
*VCE(sat)
*VCE(sat)
*VBE(sat)
*VBE(on)
*hFE 1
*hFE 2
*hFE 3
fT
Cob
Min.
300
200
6
-
-
-
-
-
-
140
160
30
-
-
Typ.
-
-
-
-
-
0.2
-
-
-
-
-
-
120
-
Max.
-
-
-
100
100
0.4
0.6
1
1
-
320
-
-
30
Unit
V
V
V
nA
nA
V
V
V
V
-
-
-
MHz
pF
Test Conditions
IC=10μA
IC=10mA
IE=10μA
VCB=300V
VEB=6V
IC=500mA, IB=50mA
IC=700mA, IB=35mA
IC=500mA, IB=50mA
VCE=5V, IC=500mA
VCE=5V, IC=50mA
VCE=5V, IC=100mA
VCE=5V, IC=700mA
VCE=5V, IC=100mA
VCB=10V, IE=0A,f=1MHz
*Pulse Test: Pulse Width ≤300µs, Duty Cycle≤2%
Ordering Information
Device
BTC2881E3
Package
TO-220
(RoHS compliant package)
Shipping
50 pcs / tube , 40 tubes/box
BTC2881E3
CYStek Product Specification