BTB4511J3 Datasheet, PDF (3/6 Pages) Cystech Electonics Corp. – PNP Epitaxial Planar High Current (High Performance) Transistor

CYStech Electronics Corp.
Spec. No. : C662J3
Issued Date : 2010.10.26
Revised Date : 2010.12.08
Page No. : 3/6
Typical Characteristics
Current Gain vs Collector Current
1000
100
VCE=2V
10000
1000
100
Saturation Voltage vs Collector Current
VCE(SAT)
IC=50IB
VCE=1V
10
1
10
100
1000
Collector Current---IC(mA)
10000
10000
Saturation Voltage vs Collector Current
VBE(SAT) @ IC=10IB
10
IC=10IB
IC=20IB
1
1
10
100
1000
Collector Current---IC(mA)
10000
On Vottage vs Collector Current
VBE(ON)@VCE=1V
10000
1000
1000
100
1
1.6
1.4
1.2
1
0.8
0.6
0.4
0.2
0
0
BTB4511J3
10
100
1000
Collector Current---IC(mA)
10000
Power Derating Curve
50
100
150
200
Ambient Temperature---TA(℃)
100
1
25
20
15
10
5
0
0
10
100
1000
Collector Current---IC(mA)
10000
Power Derating Curve
50
100
150
200
Case Temperature---TC(℃)
CYStek Product Specification