BTB4511J3 Datasheet, PDF (1/6 Pages) Cystech Electonics Corp. – PNP Epitaxial Planar High Current (High Performance) Transistor

CYStech Electronics Corp.
Spec. No. : C662J3
Issued Date : 2010.10.26
Revised Date : 2010.12.08
Page No. : 1/6
PNP Epitaxial Planar High Current (High Performance) Transistor
BTB4511J3
Features
• 5 Amps continuous current, up to 10 Amps peak current
• Very low saturation voltage
• Excellent gain characteristics specified up to 10 Amps
• Extremely low equivalent on resistance, RCE(SAT)=70mΩ at 4A
• Pb-free lead plating package
Symbol
BTB4511J3
Outline
TO-252(DPAK)
B：Base
C：Collector
E：Emitter
B CE
Absolute Maximum Ratings (Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Collector Current
Base Current
Power Dissipation @TA=25°C
Power Dissipation @TC=25°C
Operating and Storage Temperature Range
Symbol
VCBO
VCEO
VEBO
IC
ICP
IB
PD
Tj ; Tstg
Limits
Unit
-140
V
-100
V
-6
V
-5
A
-10
A
-1
A
1.5
W
20
W
-55 ~ +150
°C
BTB4511J3
CYStek Product Specification