BTB4511J3 Datasheet, PDF (2/6 Pages) Cystech Electonics Corp. – PNP Epitaxial Planar High Current (High Performance) Transistor

CYStech Electronics Corp.
Spec. No. : C662J3
Issued Date : 2010.10.26
Revised Date : 2010.12.08
Page No. : 2/6
Thermal Data
Parameter
Thermal Resistance, Junction-to-case, max
Thermal Resistance, Junction-to-ambient, max
Symbol
Rth,j-c
Rth,j-a
Value
6.25
83.3
Unit
°C/W
°C/W
Characteristics (Ta=25°C, unless otherwise specified)
Symbol
BVCBO
BVCER
BVCEO
BVEBO
ICBO
ICER
IEBO
*VCE(sat)1
*VCE(sat)2
*VCE(sat)3
*VCE(sat)4
*VBE(sat)
*VBE(on)
hFE1
hFE2
*hFE3
*hFE4
*hFE5
fT
Cob
ton
toff
Min.
-140
-140
-100
-6
-
-
-
-
-
-
-
-
-
100
100
50
30
-
-
-
Typ.
-170
-170
-120
-8
-
-
-
-18
-85
-155
-280
-990
-910
200
200
90
50
15
125
65
110
460
Max.
-
-
-
-
-50
-50
-10
-50
-115
-220
-420
-1170
-1160
-
300
320
-
-
-
-
Unit
V
V
V
V
nA
nA
nA
mV
mV
mV
mV
mV
mV
-
-
-
-
-
MHz
pF
ns
ns
Test Conditions
IC=-100μA
IC=-1μA, RBE≤1kΩ
IC=-10mA
IE=-100μA
VCB=-100V
VCE=-100V, RBE≤1kΩ
VEB=-5V
IC=-100mA, IB=-10mA
IC=-1A, IB=-100mA
IC=-2A, IB=-200mA
IC=-4A, IB=-400mA
IC=-4A, IB=-400mA
VCE=-1V, IC=-4A
VCE=-1V, IC=-10mA
VCE=-1V, IC=-1A
VCE=-1V, IC=-3A
VCE=-1V, IC=-4A
VCE=-1V, IC=-10A
VCE=-10V, IC=-100mA, f=50MHz
VCB=-10V, f=1MHz
IC=-2A, IB1=-200mA, IB2=200mA,
VCC=-10V
*Pulse Test: Pulse Width ≤300μs, Duty Cycle≤2%
Ordering Information
Device
BTB4511J3-0-T3-G
Package
TO-252
(Pb-free lead plating and halogen-free package)
Shipping
2500 pcs / Tape & Reel
BTB4511J3
CYStek Product Specification