MTC2402Q8 Datasheet, PDF (2/13 Pages) Cystech Electonics Corp. – P-Channel Logic Level Enhancement Mode MOSFET

CYStech Electronics Corp.
Spec. No. : C568Q8
Issued Date : 2012.05.02
Revised Date : 2013.11.01
Page No. : 2/13
Absolute Maximum Ratings (TC=25°C, unless otherwise noted)
Parameter
Symbol
Limits
Unit
N-channel P-channel
Drain-Source Breakdown Voltage
Gate-Source Voltage
BVDSS
20
VGS
±12
-20
±12
V
Continuous Drain Current _{TA=25 °C, VGS=4.5V (-4.5V)}
8.5
(Note 2)
ID
TA=70 °C, VGS=4.5V (-4.5V)
6.8
-7.9
-6.3
A
Pulsed Drain Current (Note 1)
IDM
40
-30
Power Dissipation
(Note 2)
TA=25°C
TA=70°C
2.5
W
1.6
Operating Junction and Storage Temperature Range
Tj; Tstg
-55~+150
°C
Thermal Data
Parameter
Thermal Resistance, Junction-to-case, max
Thermal Resistance, Junction-to-ambient, max
Lead Temperature(1/16” from case, for 10 seconds)
Symbol
RθJC
RθJA
TL
Note : 1.Pulse width limited by maximum junction temperature.
2.Surface mounted on 1 in² copper pad of FR-4 board, pulse width≤10s.
Value
25
50 (Note 2)
275
Unit
°C/W
°C/W
°C
N-Channel Electrical Characteristics (Tc=25°C, unless otherwise specified)
Symbol
Min.
Typ.
Max. Unit
Test Conditions
Static
BVDSS
20
VGS(th)
0.5
IGSS
-
IDSS
-
-
-
*RDS(ON)
-
-
-
V
VGS=0, ID=250μA
0.7
1.2
VDS=VGS, ID=250μA
-
±100
nA VGS=±12V, VDS=0
-
-
1
25
μA
VDS=20V, VGS=0
VDS=20V, VGS=0, Tj=125°C
20
24
VGS=4.5V, ID=8A
mΩ
28
36
VGS=2.5V, ID=5.2A
*GFS
-
8
-
S
VDS=5V, ID=3A
Dynamic
Ciss
-
762
995
Coss
-
74
96
pF VDS=10V, VGS=0, f=1MHz
Crss
-
87
115
*td(ON)
-
7.8
16
*tr
*td(OFF)
-
-
9.5
37
19
74
ns
VDS=10V, ID=1A, VGS=4.5V, RG=10Ω
*tf
-
23
46
*Qg
-
8
11
*Qgs
-
0.9
1.2
nC VDS=10V, ID=5A, VGS=4.5V
*Qgd
-
2.6
3.4
MTC2402Q8
CYStek Product Specification