BTD7521H8 Datasheet, PDF (2/6 Pages) Cystech Electonics Corp. – High Voltage NPN Epitaxial Planar Transistor

CYStech Electronics Corp.
Spec. No. : C615H8
Issued Date : 2010.07.06
Revised Date :
Page No. : 2/6
Characteristics (Ta=25°C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
*VCE(sat)
*RCE(sat)
*VBE(sat)
*hFE
*hFE
Cob
Min.
100
100
7
-
-
-
-
-
1000
500
-
Typ.
Max.
Unit
Test Conditions
-
-
V
IC=1mA, IE=0
-
-
V
IC=10mA, IB=0
-
-
V
IC=100μA, IC=0
-
10
μA VCB=100V, IE=0
-
10
μA VEB=7V, IC=0
-
0.5
V
IC=5A, IB=50mA
-
0.1
Ω
IC=5A, IB=50mA
-
1.2
V
IC=5A, IB=50mA
-
-
-
VCE=5V, IC=1A
-
-
-
VCE=5V, IC=5A
130
-
pF VCB=10V, f=1MHz
*Pulse Test : Pulse Width ≤380μs, Duty Cycle≤2%
Ordering Information
Device
BTD7521H8
Package
Power pak(DFN5×6)
(Pb-free lead plating)
Shipping
3000 pcs / Tape & Reel
BTD7521H8
CYStek Product Specification