BTD7521H8 Datasheet, PDF (1/6 Pages) Cystech Electonics Corp. – High Voltage NPN Epitaxial Planar Transistor

CYStech Electronics Corp.
Spec. No. : C615H8
Issued Date : 2010.07.06
Revised Date :
Page No. : 1/6
High Voltage NPN Epitaxial Planar Transistor
BTD7521H8
BVDSS
ID
RCE(SAT)
100V
10A
0.1Ω
Features
• High BVCEO
• Very high current gain
• Pb-free lead plating package
Symbol
BTD7521H8
Outline
Power pak(DFN5×6)
B：Base
C：Collector
E：Emitter
Absolute Maximum Ratings (Ta=25°C)
Parameter
Symbol
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Power Dissipation @ TA=25℃
Power Dissipation @ TC=25℃
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
Junction Temperature
Storage Temperature
Note : 1. Single Pulse , Pw≦300μs,Duty≦2%.
2. When mounted on a PCB with the minimum pad size.
VCBO
VCEO
VEBO
IC
ICP
PD
PD
RθJA
RθJC
Tj
Tstg
BTD7521H8
Limits
100
100
7
10
20 (Note 1)
2.5 (Note 2)
60
50 (Note 2)
2.08
150
-55~+150
Unit
V
V
V
A
W
°C/W
°C/W
°C
°C
CYStek Product Specification