BTD1857AJ3G Datasheet, PDF (2/8 Pages) Cystech Electonics Corp. – Silicon NPN Epitaxial Planar Transistor

CYStech Electronics Corp.
Spec. No. : C855J3G
Issued Date : 2004.10.04
Revised Date :2010.12.08
Page No. : 2/7
Characteristics (Ta=25°C)
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
BVCBO
180
-
-
V
IC=50µA, IE=0
BVCEO
160
-
-
V
IC=1mA, IB=0
BVEBO
5
-
-
V
IE=50µA, IC=0
ICBO
-
-
1
µA VCB=160V, IE=0
IEBO
-
-
1
µA VEB=4V, IC=0
*VCE(sat)
-
-
0.6
V
IC=1A, IB=100mA
*VBE(on)
-
-
1.5
V
VCE=5V, IC=150mA
hFE1
160
-
320
-
VCE=5V, IC=150mA
hFE2
30
-
-
-
VCE=5V, IC=500mA
fT
-
140
-
MHz VCE=5V, IC=150mA
Cob
-
27
-
pF VCB=10V, IE=0, f=1MHz
*Pulse Test: Pulse Width ≤380µs, Duty Cycle≤2%
Ordering Information
Device
BTD1857AJ3G
Package
TO-252
(RoHS compliant and Halogen-free)
Shipping
2500 pcs / Tape & Reel
Marking
D1857A
BTD1857AJ3G
CYStek Product Specification