BTD1857AJ3G Datasheet, PDF (1/8 Pages) Cystech Electonics Corp. – Silicon NPN Epitaxial Planar Transistor

CYStech Electronics Corp.
Silicon NPN Epitaxial Planar Transistor
BTD1857AJ3G
BVCEO
IC
RCESAT
Spec. No. : C855J3G
Issued Date : 2004.10.04
Revised Date :2010.12.08
Page No. : 1/7
160V
1.5A
310mΩ
Description
• High BVCEO
• High current capability
• Complementary to BTB1236AJ3G
• RoHS compliant and Halogen-free package
Symbol
BTD1857AJ3G
Outline
TO-252AB
TO-252AA
B：Base
C：Collector
E：Emitter
Absolute Maximum Ratings (Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Power Dissipation @TA=25℃
Power Dissipation @TC=25℃
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
PD
Tj
Tstg
BTD1857AJ3G
BCE
B CE
Limits
Unit
180
V
160
V
5
V
1.5
A
3
A
1
W
10
W
150
°C
-55~+150
°C
CYStek Product Specification