W245-30 Datasheet, PDF (9/12 Pages) Cypress Semiconductor – Frequency Multiplying, Peak Reducing EMI Solution

W245-30
Absolute Maximum Ratings^[3]
Stresses greater than those listed in this table may cause per-
manent damage to the device. These represent a stress rating
only. Operation of the device at these or any other conditions
.
Parameter
Description
V_DD, V_IN
T_STG
T_A
T_B
P_D
Voltage on any pin with respect to GND
Storage Temperature
Operating Temperature
Ambient Temperature under Bias
Power Dissipation
above those specified in the operating sections of this specifi-
cation is not implied. Maximum conditions for extended peri-
ods may affect reliability.
Rating
Unit
–0.5 to +7.0
V
–65 to +150
°C
0 to +70
°C
–55 to +125
°C
0.5
W
DC Electrical Characteristics: 0°C < T_A < 70°C, V_DD = 3.3V ±0.3V ^[4]
Parameter
Description
Test Condition
Min.
I_DD
Supply Current
t_ON
Power Up Time
First locked clock cycle after Power
Good
V_IL
Input Low Voltage
V_IH
Input High Voltage
2.4
V_OL
Output Low Voltage
V_OH
Output High Voltage
2.4
I_IL
Input Low Current
Note 4
I_IH
Input High Current
Note 4
I_OL
Output Low Current
@ 0.4V, V_DD = 3.3V
I_OH
Output High Current
@ 2.4V, V_DD = 3.3V
C_I
Input Capacitance
R_P
Input Pull-Up Resistor
Z_OUT
Clock Output Impedance
Note:
3. Single Power Supply: The voltage on any input or I/O pin cannot exceed the power pin during power up.
4. Inputs OR1:2 and IR1:2 have a pull-up resistor, Input SSON# has a pull-down resistor.
Typ.
18
15
15
250
25
Max.
Unit
32
mA
5
ms
0.8
V
V
0.4
V
V
-100
µA
10
µA
mA
mA
7
pF
kΩ
Ω
Document #: 38-07229 Rev. *B
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