MB39C601 Datasheet, PDF (8/37 Pages) Cypress Semiconductor – High power factor in single conversion

MB39C601
Parameter
Symbol
Pin
No.
DRIVER
Driver on-
resistance
RDS(on)(DRN)
6,7
Driver off leakage
current
IDRN(OFF)
6,7
High-side driver
on-resistance
RDS(on)(HSDRV) 5,6
DRN discharge
current
IDIS
6,7
TZE zero energy
threshold voltage
VTZE(TH)
2
TZE clamp
voltage
VTZE(CLAMP)
2
Start timer
TRANSFORMER _operation
VTZE(START)
2
ZERO ENERGY
threshold voltage
DETECTION
Driver turn-on
Delay time
tDRY(TZE)
6
Wait time for zero
energy detection
tWAIT(TZE)
6
Start timer period
tST
6
OVERVOLTAGE
FAULT
OVP threshold
voltage
VTZE(OVP) 2
OVP blanking time t_{BLANK, OVP}
6
Input bias current
ITZE(bias)
2
Condition
IDRN=4.0A
VDRN=12V
High-side
Driver current=50mA
VDD=OPEN, DRN=12V,
Fault latch set
-
ITZE= -10µA
-
150Ω pull-up 12V on DRN
-
VTZE=0V
-
-
VTZE=5V
Over Load
detection current
Over Load delay
time
OVERLOAD FAULT ^{Retry time after}
Over Load
Over Load
detection
boundary
resistance
SHUTDOWN
THRESHOLD
Shutdown
Threshold voltage
Shutdown OTM
current
MAXIMUM ON
TIME
OTP
ON-Time
OTM voltage
Protection
temperature
Protection
temperature
hysteresis
IFB(OL)
tOL
tRETRY
ROTM(TH)
VOTM(Vth)
IOTM, PU
tOTM
VOTM
TSD
TSD_HYS
1
-
6
IFB=0A
6
ROTM=76kΩ
4
-
4 OTM=
4
VOTM = VOTM(vth)
6
ROTM=383kΩ
6
ROTM=76kΩ
4
-
-
Tj, temperature rising
-
Tj, temperature falling,
degrees below TSD
Value
Unit
Min Typ Max
-
200* 400* mΩ
-
1.5 20.0 µA
-
6*
11* Ω
2.38 3.40 4.42 mA
5*
20* 50* mV
-200 -160 -100 mV
0.10 0.15 0.20 V
-
150
-
Ns
2.0 2.4 2.8 µs
150 240 300 µs
4.85 5.00 5.15 V
0.6 1.0 1.7 µs
-0.1
0
+0.1 ^µA
0* 1.5* 3.0* µA
200 250 300 Ms
-
750
-
Ms
100 120 150 kΩ
0.7 1.0 1.3 V
-600 -450 -300 µA
3.74 4.17 4.60 µs
3.4 3.8 4.2 µs
2.7 3.0 3.3 V
- +150* -
°C
-
25*
-
°C
Document Number: 002-08393 Rev.*A
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