CYII5SM1300AB_11 Datasheet, PDF (8/35 Pages) Cypress Semiconductor – IBIS5 1.3 Megapixel CMOS Image Sensor

CYII5SM1300AB
Electro-voltaic Response Curve
1,2
Figure 7. Electro-Voltaic Response Curve
1
0,8
0,6
0,4
0,2
0
0
10000 20000 30000 40000 50000 60000 70000 80000
# electrons
Figure 7 shows the pixel response curve in linear response mode. This curve is the relation between the electrons detected in the
pixel and the output signal. The resulting voltage-electron curve is independent of any parameters (integration time, and others). The
voltage to electrons conversion gain is 17.6 µV/electron.
IBIS5-BE-1300 (CYII5FM1300AB)
The IBIS5-BE-1300 is processed on a thicker epitaxial Si layer featuring a superb sensitivity in the NIR (Near Infra Red) wavelengths
(700–900 nm). The spectral response curves of the two IBIS5-B-1300 image sensors are shown in Figure 6 on page 7. As many
machine vision applications use light sources in the NIR, the IBIS5-BE-1300 sensor has a significant sensitivity advantage in the NIR.
A drawback of the thicker epitaxial layer is a slight performance decrease in MTF (Modular Transfer Function or electrical pixel to pixel
cross-talk) as indicated in Table 7.
Table 7. MTF Comparison
Direction
Horizontal
Horizontal
Horizontal
Horizontal
Vertical
Vertical
Vertical
Vertical
Wavelength
600
700
800
900
600
700
800
900
IBIS5-B-1300
0.58
0.53
IBIS5-BE-1300
0.37
0.18
0.16
0.07
0.26
0.16
0.13
0.11
The resulting image sharpness is hardly affected by this decreased MTF value. Both IBIS5-B-1300 versions are fully pin compatible
and have identical timing and biasing
Document #: 38-05710 Rev. *H
Page 8 of 35
[+] Feedback