S34ML01G2 Datasheet, PDF (67/76 Pages) Cypress Semiconductor – 1 Gb, 2 Gb, 4 Gb, 3 V, 4-bit ECC, SLC NAND Flash Memory for Embedded

S34ML01G2
S34ML02G2
S34ML04G2
9. Error Management
9.1 System Bad Block Replacement
Over the lifetime of the device, additional Bad Blocks may develop. In this case, each bad block has to be replaced by copying any
valid data to a new block. These additional Bad Blocks can be identified whenever a program or erase operation reports “Fail” in the
Status Register.
The failure of a page program operation does not affect the data in other pages in the same block, thus the block can be replaced by
re-programming the current data and copying the rest of the replaced block to an available valid block. Refer to Table 9.1 and
Figure 9.1 for the recommended procedure to follow if an error occurs during an operation.
Operation
Erase
Program
Read
Table 9.1 Block Failure
Recommended Procedure
Block Replacement
Block Replacement
ECC (4 bit / 512+16 byte)
Figure 9.1 Bad Block Replacement
Block A
Block B
(2)
Data
Data
N^th page
Failure ⁽¹⁾
(3)
FFh
FFh
N^th page
buffer memory of the controller
Notes:
1. An error occurs on the Nth page of Block A during a program operation.
2. Data in Block A is copied to the same location in Block B, which is a valid block.
3. The Nth page of block A, which is in controller buffer memory, is copied into the Nth page of Block B.
4. Bad block table should be updated to prevent from erasing or programming Block A.
Document Number: 002-00499 Rev. *N
Page 67 of 76