S34ML01G2 Datasheet, PDF (1/76 Pages) Cypress Semiconductor – 1 Gb, 2 Gb, 4 Gb, 3 V, 4-bit ECC, SLC NAND Flash Memory for Embedded

S34ML01G2
S34ML02G2
S34ML04G2
1 Gb, 2 Gb, 4 Gb, 3 V, 4-bit ECC, SLC
NAND Flash Memory for Embedded
Distinctive Characteristics
 Density
– 1 Gb / 2 Gb / 4 Gb
 Architecture
– Input / Output Bus Width: 8 bits / 16 bits
– Page size:
– ×8:
1 Gb: (2048 + 64) bytes; 64-byte spare area
2 Gb / 4 Gb: (2048 + 128) bytes; 128-byte spare area
– ×16:
1 Gb: (1024 + 32) words; 32-word spare area
2 Gb / 4 Gb (1024 + 64) words; 64-word spare area
– Block size: 64 Pages
– ×8:
1 Gb: 128 KB+ 4 KB
2 Gb / 4 Gb: 128 KB + 8 KB
– ×16
1 Gb: 64k + 2k words
2 Gb / 4 Gb: 64k + 4k words
– Plane size
– ×8
1 Gb: 1024 blocks per plane or (128 MB + 4 MB
2 Gb: 1024 blocks per plane or (128 MB + 8 MB
4 Gb: 2048 blocks per plane or (256 MB + 16 MB
– ×16
1 Gb: 1024 blocks per plane or (64M + 2M) words
2 Gb: 1024 Blocks per Plane or (64M + 4M) words
4 Gb: 2048 Blocks per Plane or (128M + 8M) words
– Device Size
– 1 Gb: 1 plane per device or 128 Mbyte
– 2 Gb: 2 planes per device or 256 Mbyte
– 4 Gb: 2 planes per device or 512 Mbyte
 NAND Flash interface
– Open NAND Flash Interface (ONFI) 1.0 compliant
– Address, Data, and Commands multiplexed
 Supply Voltage
– 3.3-V device: V_CC = 2.7 V ~ 3.6 V
 Security
– One Time Programmable (OTP) area
– Serial number (unique ID) (Contact factory for support)
– Hardware program/erase disabled during power transition
 Additional features
– 2 Gb and 4 Gb parts support Multiplane Program and Erase
commands
– Supports Copy Back Program
– 2 Gb and 4 Gb parts support Multiplane Copy Back Program
– Supports Read Cache
 Electronic signature
– Manufacturer ID: 01h
 Operating temperature
– Industrial: –40 °C to 85 °C
– Industrial Plus: –40 °C to 105 °C
Performance
 Page Read / Program
– Random access: 25 µs (Max) (S34ML01G2)
– Random access: 30 µs (Max) (S34ML02G2, S34ML04G2)
– Sequential access: 25 ns (Min)
– Program time / Multiplane Program time: 300 µs (Typ)
 Block Erase (S34ML01G2)
– Block Erase time: 3 ms (Typ)
 Block Erase / Multiplane Erase (S34ML02G2, S34ML04G2)
– Block Erase time: 3.5 ms (Typ)
 Reliability
– 100,000 Program / Erase cycles (Typ)
(with 4-bit ECC per 528 bytes (×8) or 264 words (×16))
– 10 Year Data retention (Typ)
– For one plane structure (1-Gb density)
– Block zero is valid and will be valid for at least 1,000 program-
erase cycles with ECC
– For two plane structures (2-Gb and 4-Gb densities)
– Blocks zero and one are valid and will be valid for at least 1,000
program-erase cycles with ECC
 Package options
– Pb-free and low halogen
– 48-Pin TSOP 12 × 20 × 1.2 mm
– 63-Ball BGA 9 × 11 × 1 mm
– 67-Ball BGA 8 × 6.5 × 1 mm (S34ML01G2, S34ML02G2)
Cypress Semiconductor Corporation • 198 Champion Court
Document Number: 002-00499 Rev. *N
• San Jose, CA 95134-1709 • 408-943-2600
Revised August 30, 2016