W180_05 Datasheet, PDF (5/10 Pages) Cypress Semiconductor – Peak Reducing EMI Solution

W180
Absolute Maximum Ratings^[1]
Stresses greater than those listed in this table may cause
permanent damage to the device. These represent a stress
rating only. Operation of the device at these or any other condi-
.
Parameter
Description
V_DD, V_IN
T_STG
T_A
T_B
P_D
Voltage on any pin with respect to GND
Storage Temperature
Operating Temperature
Ambient Temperature under Bias
Power Dissipation
tions above those specified in the operating sections of this
specification is not implied. Maximum conditions for extended
periods may affect reliability.
Rating
Unit
–0.5 to +7.0
V
–65 to +150
°C
0 to +70
°C
–55 to +125
°C
0.5
W
DC Electrical Characteristics: 0°C < T_A < 70°C, V_DD = 3.3V ±5%
Parameter
Description
Test Condition
Min.
I_DD
Supply Current
t_ON
Power Up Time
First locked clock cycle after Power
Good
V_IL
Input Low Voltage
V_IH
Input High Voltage
2.4
V_OL
Output Low Voltage
V_OH
Output High Voltage
2.4
I_IL
Input Low Current
Note 2
–50
I_IH
Input High Current
Note 2
I_OL
Output Low Current
@ 0.4V, V_DD = 3.3V
I_OH
Output High Current
@ 2.4V, V_DD = 3.3V
C_I
Input Capacitance
R_P
Input Pull-Up Resistor
Z_OUT
Clock Output Impedance
Notes:
1. Single Power Supply: The voltage on any input or I/O pin cannot exceed the power pin during power-up.
2. Inputs FS2:1& SS% have a pull-up resistor; Input SSON# has a pull-down resistor.
Typ.
18
15
15
500
25
Max.
Unit
32
mA
5
ms
0.8
V
V
0.4
V
V
µA
50
µA
mA
mA
7
pF
kΩ
Ω
Document #: 38-07156 Rev. *B
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