W256 Datasheet, PDF (4/9 Pages) Cypress Semiconductor – 12 Output Buffer for 2 DDR and 3 SRAM DIMMS

W256
Maximum Ratings
Supply Voltage to Ground Potential ..................–0.5 to +7.0V
DC Input Voltage (except BUF_IN) ............ –0.5V to V_DD+0.5
Storage Temperature .................................. –65°C to +150°C
Static Discharge Voltage ............................................>2000V
(per MIL-STD-883, Method 3015)
Operating Conditions^[2]
Parameter
V_DD3.3
V_DD2.5
T_A
C_OUT
C_IN
Description
Supply Voltage
Supply Voltage
Operating Temperature (Ambient Temperature)
Output Capacitance
Input Capacitance
Min.
Typ.
Max.
Unit
3.135
3.465
V
2.375
2.625
V
0
70
°C
6
pF
5
pF
Electrical Characteristics Over the Operating Range
Parameter
Description
Test Conditions
Min.
Typ.
Max.
V_IL
Input LOW Voltage
For all pins except SMBus
0.8
V_IH
Input HIGH Voltage
2.0
I_IL
Input LOW Current
V_IN = 0V
50
I_IH
Input HIGH Current
V_IN = V_DD
50
I_OH
Output HIGH Current
V_DD = 2.375V
V_OUT = 1V
–18
–32
I_OL
Output LOW Current
V_DD = 2.375V
V_OUT = 1.2V
26
35
V_OL
Output LOW Voltage^[3]
I_OL = 12 mA, V_DD = 2.375V
0.6
V_OH
Output HIGH Voltage^[3]
I_OH = –12 mA, V_DD = 2.375V
1.7
I_DD
Supply Current^[3]
Unloaded outputs, 133 MHz
400
(DDR-Only mode)
I_DD
Supply Current
Loaded outputs, 133 MHz
500
(DDR-Only mode)
I_DDS
V_OUT
Supply Current
Output Voltage Swing
PWR_DWN# = 0
See Test Circuity (Refer to
0.7
Figure 1)
100
V_DD + 0.6
V_OC
Output Crossing Voltage
(V_DD/2)
–0.1
V_DD/2
(V_DD/2)
+0.1
IN_DC
Input Clock Duty Cycle
48
52
Notes:
2. Multiple Supplies: The voltage on any input or I/O pin cannot exceed the power pin during power-up. Power supply sequencing is NOT required.
3. Parameter is guaranteed by design and characterization. Not 100% tested in production.
Unit
V
V
µA
µA
mA
mA
V
V
mA
mA
µA
V
V
%
Document #: 38-07256 Rev. *C
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