CY14B101P Datasheet, PDF (24/33 Pages) Cypress Semiconductor – 1 Mbit (128K x 8) Serial SPI nvSRAM with Real Time Clock

PRELIMINARY
CY14B101P
Data Retention and Endurance
Parameter
DATA_R
NV_C
Capacitance
Data Retention
Nonvolatile STORE Operations
Parameter^[6]
C_IN
C_OUT
Description
Input Capacitance
Output Pin Capacitance
Description
Test Conditions
T_A = 25°C, f = 1MHz,
V_CC = V_CC (Typ)
Thermal Resistance
Parameter^[6]
Θ_JA
Θ_JC
Description
Thermal Resistance
(Junction to Ambient)
Thermal Resistance
(Junction to Case)
Test Conditions
Test conditions follow standard test methods
and procedures for measuring thermal
impedance, per EIA / JESD51.
Min
20
200
Max
6
8
16-SOIC
TBD
TBD
Unit
Years
K
Unit
pF
pF
Unit
°C/W
°C/W
3.0V
OUTPUT
30 pF
Figure 24. AC Test Loads and Waveforms
577Ω
R1
R2
789Ω
3.0V
OUTPUT
5 pF
577Ω
R1
R2
789Ω
AC Test Conditions
Input Pulse Levels .................................................... 0V to 3V
Input Rise and Fall Times (10% - 90%) ........................ <3 ns
Input and Output Timing Reference Levels .................... 1.5V
Note
6. These parameters are guaranteed by design and are not tested.
Document #: 001-44109 Rev. *C
Page 24 of 33
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