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| CY14B101L_09 Datasheet, PDF (17/18 Pages) Cypress Semiconductor – 1 Mbit (128K x 8) nvSRAM | |||
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CY14B101L
Document History Page
Document Title: CY14B101L 1 Mbit (128K x 8) nvSRAM
Document Number: 001-06400
Rev. ECN No.
Orig. of
Change
Submission
Date
Description of Change
**
425138
TUP
See ECN New data sheet
*A
437321
TUP
See ECN Show data sheet on External Web
*B
471966
TUP
See ECN
Changed ICC3 from 5 mA to 10 mA
Changed ISB from 2 mA to 3 mA
Changed VIH(min) from 2.2V to 2.0V
Changed tRECALL from 40 μs to 50 μs
Changed Endurance from 1 million Cycles to 500K Cycles
Changed Data Retention from 100 years to 20 years
Added Soft Sequence Processing Time Waveform
Updated Part Numbering Nomenclature and Ordering Information
*C
503272
PCI
See ECN
Changed from Advance to Preliminary
Changed the term âUnlimitedâ to âInfiniteâ
Changed Endurance from 500K Cycles to 200K Cycles
Added temperature specification to Data Retention - 20 years at 55°C
Removed Icc1 values from the DC table for 25 ns and 35 ns industrial
grade
Changed Icc2 value from 3 mA to 6 mA in the DC table
Added a footnote on VIH
Changed VSWITCH(min) from 2.55V to 2.45V
Added footnote 17 related to using the software command
Updated Part Nomenclature Table and Ordering Information Table
*D
597002
TUP
*E
688776
VKN
*F
1349963 UHA/SFV
See ECN
See ECN
See ECN
Removed VSWITCH(min) specification from the AutoStore/Power Up RE-
CALL table
Changed tGLAX specification from 20 ns to 1 ns
Added tDELAY(max) specification of 70 μs in the hardware STORE cycle
table
Removed tHLBL specification
Changed tSS specification from 70 μs (min) to 70 μs (max)
Changed VCAP(max) from 57 μF to 120 μF
Added footnote related to HSB
Changed tGLAX to tGHAX
Changed from Preliminary to Final
Updated Ordering Information table
*G
2427986
GVCH
See ECN Move to external web
*H
2546756 GVCH/AESA 08/01/2008 Aligned part number nomenclature
Corrected typo in ordering information
Changed pin definition of NC pin
Updated data sheet template
Document Number: 001-06400 Rev. *J
Page 17 of 18
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