CY14B101KA_11 Datasheet, PDF (17/34 Pages) Cypress Semiconductor – 1 Mbit (128K x 8/64K x 16) nvSRAM with Real Time Clock

CY14B101KA
CY14B101MA
Maximum Ratings
Exceeding maximum ratings may impair the useful life of the
device. These user guidelines are not tested.
Storage temperature ................................ –65 C to +150 C
Maximum accumulated storage time
At 150 C ambient temperature ...................... 1000 h
At 85 C ambient temperature .................... 20 Years
Ambient temperature
with power applied ................................... –55 C to +150 C
Supply voltage on V_CC relative to V_SS ...........–0.5 V to 4.1 V
Voltage applied to outputs
in High Z state .................................... –0.5 V to V_CC + 0.5 V
Input voltage ....................................... –0.5 V to V_CC + 0.5 V
Transient voltage (< 20 ns) on
any pin to ground potential ................. –2.0 V to V_CC + 2.0 V
Package power dissipation
capability (T_A = 25 °C) ................................................. 1.0 W
Surface mount Pb soldering
temperature (3 seconds) ......................................... +260 C
DC output current (1 output at a time, 1s duration) .... 15 mA
Static discharge voltage
(per MIL-STD-883, Method 3015) ......................... > 2001 V
Latch up current ............................................... ..... > 200 mA
Operating Range
Range
Industrial
Ambient Temperature
–40 C to +85 C
V_CC
2.7 V to 3.6 V
DC Electrical Characteristics
Over the Operating Range (V_CC = 2.7 V to 3.6 V)
Parameter
Description
Test Conditions
Min Typ ^[16] Max
V_CC
Power supply voltage
2.7
3.0
3.6
I_CC1
Average V_cc current
t_RC = 25 ns
t_RC = 45 ns
Values obtained without output loads
(I_OUT = 0 mA)
–
–
70
52
I_CC2
Average V_CC current during
All inputs don’t care, V_CC = Max.
STORE
Average current for duration t_STORE
–
–
10
I_CC3[16]
Average V_CC current at
t_RC= 200 ns, V_CC(Typ), 25 °C
All inputs cycling at CMOS levels.
Values obtained without output loads
(I_OUT = 0 mA).
–
35
–
I_CC4
Average V_CAP current during
All inputs don’t care. Average current for
AutoStore cycle
duration t_STORE
–
–
5
I_SB
V_CC standby current
CE > (V_CC – 0.2 V).
–
–
5
V_IN < 0.2 V or > (V_CC – 0.2 V). W bit set to ‘0’.
Standby current level after nonvolatile cycle
is complete. Inputs are static. f = 0 MHz.
I_IX[17]
Input leakage current (except
HSB)
V_CC = Max, V_SS < V_IN < V_CC
–1
–
+1
I_OZ
V_IH
V_IL
V_OH
V_OL
V_CAP[18]
Input leakage current (for HSB)
Off state output leakage current
Input HIGH voltage
Input LOW voltage
Output HIGH voltage
Output LOW voltage
Storage capacitor
V_CC = Max, V_SS < V_IN < V_CC
V_CC = Max, V_SS < V_OUT < V_CC,
CE or OE > V_IH or BHE/BLE > V_IH or WE < V_IL
–100
–1
2.0
I_OUT = –2 mA
I_OUT = 4 mA
Between V_CAP pin and V_SS, 5 V rated
V_SS – 0.5
2.4
–
61
–
+1
–
+1
– V_CC + 0.5
–
0.8
–
–
–
0.4
68
180
Unit
V
mA
mA
mA
mA
mA
mA
µA
µA
µA
V
V
V
V
µF
Notes
16. Typical values are at 25 °C, V_CC = V_CC(Typ). Not 100% tested.
17.
The HSB pin
parameter is
chhaasraI^Oc^Ute^Tri=ze–d2
µA
but
for
not
Vte_OsHteodf.2.4
V
when
both
active
HIGH
and
low
drivers
are
disabled.
When
they
are
enabled
standard
V_OH
and
V_OL
are
valid.
This
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Document #: 001-42880 Rev. *I
Page 17 of 34
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