W311 Datasheet, PDF (15/19 Pages) Silicon Laboratories – FTG for VIA™ Pro-266 DDR Chipset

W311
Absolute Maximum Ratings
Stresses greater than those listed in this table may cause per-
manent damage to the device. These represent a stress rating
only. Operation of the device at these or any other conditions
above those specified in the operating sections of this specifi-
cation is not implied. Maximum conditions for extended peri-
ods may affect reliability.
Parameter
Description
Rating
Unit
V_DD, V_IN
T_STG
T_B
T_A
ESD_PROT
Voltage on Any Pin with Respect to GND
Storage Temperature
Ambient Temperature under Bias
Operating Temperature
Input ESD Protection
–0.5 to +7.0
V
–65 to +150
°C
–55 to +125
°C
0 to +70
°C
2 (min.)
kV
DC Electrical Characteristics: T_A = 0°C to +70°C, 3.3V, V_DD = 3.3V±5%, 2.5V, V_DD = 2.5V±5%
Parameter
Description
Test Condition
Min.
Typ.
Max.
Unit
Supply Current
I_DD
3.3V Supply Current
I_DD
2.5V Supply Current
Logic Inputs
CPU1:3 = 133 MHz ^[2]
150
mA
50
mA
V_IL
Input Low Voltage
V_IH
Input High Voltage
I_IL
Input Low Current^[3]
I_IH
Input High Current^[3]
Clock Outputs
GND – 0.3
2.0
0.8
V
V_DD + 0.3
V
–25
µA
10
µA
V_OL
Output Low Voltage
I_OL = 1 mA
V_OH
Output High Voltage
I_OH = –1 mA
3.1
V_OH
Output High Voltage CPU1:3,
I_OH = –1 mA
2.2
APIC0:2
50
mV
V
V
I_OL
Output Low Current CPU1:3
V_OL = 1.25V
PCI_F, PCI1:8 V_OL = 1.5V
AGP0:2
V_OL = 1.25V
APIC0:2
V_OL = 1.25V
REF0:1
V_OL = 1.5V
48-MHz
V_OL = 1.5V
24-MHz
V_OL = 1.5V
I_OH
Output High Current CPU1:3
V_OH = 1.25V
PCI_F, PCI1:8 V_OH = 1.5V
AGP0:2
V_OL = 1.25V
APIC0:1
V_OH = 1.5V
48-MHz
V_OH = 1.5V
24-MHz
V_OH = 1.5V
Notes:
2. All clock outputs loaded with 6" 60Ω transmission lines with 22-pF capacitors.
3. Inputs have internal pull-up resistors.
27
57
97
mA
20.5
53
139
mA
40
85
140
mA
40
85
140
mA
25
37
76
mA
25
37
76
mA
25
37
76
mA
25
55
97
mA
31
55
139
mA
40
85
140
mA
27
44
94
mA
27
44
94
mA
25
37
76
mA
15