CY8C34_13 Datasheet, PDF (102/130 Pages) Cypress Semiconductor – Programmable System-on-Chip (PSoC®)

PSoC^® 3: CY8C34 Family Datasheet
Figure 11-61. Clock to Output Performance
11.7 Memory
Specifications are valid for –40 °C ≤ T_A ≤ 85 °C and T_J ≤ 100 °C, except where noted. Specifications are valid for 1.71 V to 5.5 V,
except where noted.
11.7.1 Flash
Table 11-52. Flash DC Specifications
Parameter
Description
Erase and program voltage
Conditions
V_DDD pin
Min
Typ
1.71
–
Max
Units
5.5
V
Table 11-53. Flash AC Specifications
Parameter
Description
Conditions
Min
Typ
T_WRITE
T_ERASE
Row write time (erase + program)
Row erase time
Row program time
–
15
–
10
–
5
T_BULK
Bulk erase time (16 KB to 64 KB)
–
–
Sector erase time (8 KB to 16 KB)
–
–
T_PROG
Total device programming time
No overhead^[55]
–
1.5
Flash data retention time, retention Average ambient temp.
20
–
period measured from last erase cycle T_A ≤ 55 °C, 100 K erase/program
cycles
Average ambient temp.
10
–
T_A ≤ 85 °C, 10 K erase/program
cycles
Max
Units
20
ms
13
ms
7
ms
35
ms
15
ms
2
seconds
–
years
–
years
Note
55. See PSoC^® 3 Device Programming Specifications for a description of a low-overhead method of programming PSoC 3 flash.
Document Number: 001-53304 Rev. *Q
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