CYDC128B16_11 Datasheet, PDF (1/29 Pages) Cypress Semiconductor – 1.8 V 4 K/8 K/16 K × 16 and 8 K/16 K × 8 ConsuMoBL Dual-Port Static RAM

CYDC128B16
1.8 V 4 K/8 K/16 K × 16 and 8 K/16 K × 8
ConsuMoBL Dual-Port Static RAM
Features
■ True dual-ported memory cells which allow simultaneous
access of the same memory location
■ 4/8/16 K × 16 and 8/16 K × 8 organization
■ High speed access: 40 ns
■ Ultra low operating power
❐ Active: I_CC = 15 mA (typical) at 55 ns
❐ Active: I_CC = 25 mA (typical) at 40 ns
❐ Standby: I_SB3 = 2 μA (typical)
■ Port-independent 1.8 V, 2.5 V, and 3.0 V I/Os
■ Pb-free 14 × 14 × 1.4 mm 100-pin Thin Quad Flat Pack (TQFP)
Package
Selection Guide for V_CC = 1.8 V
Description
Port I/O Voltages (P1-P2)
Maximum Access Time
Typical Operating Current
Typical Standby Current for I_SB1
Typical Standby Current for I_SB3
CYDC128B16
–40
1.8 V-1.8 V
40
25
2
2
■ Full asynchronous operation
■ Pin select for master or slave
■ Expandable data bus to 32 bits with master/slave chip select
when using more than one device
■ On-chip arbitration logic
■ On-chip semaphore logic
■ Input read registers (IRR) and output drive registers (ODR)
■ INT flag for port-to-port communication
■ Separate upper byte and lower byte control
■ Commercial and industrial temperature ranges
CYDC128B16
–55
Unit
1.8 V-1.8 V
55
ns
15
mA
2
μA
2
μA
Selection Guide for V_CC = 2.5 V
Description
Port I/O Voltages (P1-P2)
Maximum Access Time
Typical Operating Current
Typical Standby Current for I_SB1
Typical Standby Current for I_SB3
Selection Guide for V_CC = 3.0 V
Description
Port I/O Voltages (P1-P2)
Maximum Access Time
Typical Operating Current
Typical Standby Current for I_SB1
Typical Standby Current for I_SB3
CYDC128B16
–40
2.5 V-2.5 V
40
39
6
4
CYDC128B16
–40
3.0 V-3.0 V
40
49
7
6
CYDC128B16
–55
2.5 V-2.5 V
55
28
6
4
CYDC128B16
–55
3.0 V-3.0 V
55
42
7
6
Unit
ns
mA
μA
μA
Unit
ns
mA
μA
μA
Cypress Semiconductor Corporation • 198 Champion Court
Document #: 001-01638 Rev. *H
• San Jose, CA 95134-1709
408-943-2600
Revised March 1, 2011
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