CY7C1461AV33_06 Datasheet, PDF (1/29 Pages) Cypress Semiconductor – 36-Mbit (1M x 36/2 M x 18/512K x 72) Flow-Through SRAM with NoBL™ Architecture

CY7C1461AV33
CY7C1463AV33
CY7C1465AV33
36-Mbit (1M x 36/2 M x 18/512K x 72)
Flow-Through SRAM with NoBL™ Architecture
Features
Functional Description^[1]
• No Bus Latency™ (NoBL™) architecture eliminates
dead cycles between write and read cycles
• Can support up to 133-MHz bus operations with zero
wait states
— Data is transferred on every clock
• Pin-compatible and functionally equivalent to ZBT™
devices
• Internally self-timed output buffer control to eliminate
the need to use OE
• Registered inputs for flow-through operation
• Byte Write capability
• 3.3V/2.5V I/O power supply
• Fast clock-to-output times
— 6.5 ns (for 133-MHz device)
• Clock Enable (CEN) pin to enable clock and suspend
operation
• Synchronous self-timed writes
• Asynchronous Output Enable
• CY7C1461AV33, CY7C1463AV33 available in
JEDEC-standard lead-free 100-pin TQFP package,
lead-free and non-lead-free 165-ball FBGA package.
CY7C1465AV33 available in lead-free and non-lead-free
209-ball FBGA package
• Three chip enables for simple depth expansion
• Automatic Power-down feature available using ZZ
mode or CE deselect
• IEEE 1149.1 JTAG-Compatible Boundary Scan
• Burst Capability—linear or interleaved burst order
• Low standby power
The CY7C1461AV33/CY7C1463AV33/CY7C1465AV33 is a
3.3V, 1M x 36/2M x 18/512K x 72 Synchronous Flow -through
Burst SRAM designed specifically to support unlimited true
back-to-back Read/Write operations without the insertion of
wait states. The CY7C1461AV33/CY7C1463AV33/CY7C1465AV33
is equipped with the advanced No Bus Latency (NoBL) logic
required to enable consecutive Read/Write operations with
data being transferred on every clock cycle. This feature
dramatically improves the throughput of data through the
SRAM, especially in systems that require frequent Write-Read
transitions.
All synchronous inputs pass through input registers controlled
by the rising edge of the clock. The clock input is qualified by
the Clock Enable (CEN) signal, which when deasserted
suspends operation and extends the previous clock cycle.
Maximum access delay from the clock rise is 6.5 ns (133-MHz
device).
Write operations are controlled by the two or four Byte Write
Select (BW_X) and a Write Enable (WE) input. All writes are
conducted with on-chip synchronous self-timed write circuitry.
Three synchronous Chip Enables (CE₁, CE₂, CE₃) and an
asynchronous Output Enable (OE) provide for easy bank
selection and output tri-state control. In order to avoid bus
contention, the output drivers are synchronously tri-stated
during the data portion of a write sequence.
Selection Guide
133 MHz
100 MHz
Maximum Access Time
6.5
8.5
Maximum Operating Current
310
290
Maximum CMOS Standby Current
120
120
Note:
1. For best-practices recommendations, please refer to the Cypress application note System Design Guidelines on www.cypress.com.
Unit
ns
mA
mA
Cypress Semiconductor Corporation • 198 Champion Court • San Jose, CA 95134-1709 • 408-943-2600
Document #: 38-05356 Rev. *E
Revised June 23, 2006
[+] Feedback