CY7C1410V18 Datasheet, PDF (1/23 Pages) Cypress Semiconductor – 36-Mbit QDR-II™ SRAM 2-Word Burst Architecture

PRELIMINARY
CY7C1410V18
CY7C1425V18
CY7C1412V18
CY7C1414V18
36-Mbit QDR-II™ SRAM 2-Word
Burst Architecture
Features
Functional Description
• Separate Independent Read and Write data ports
— Supports concurrent transactions
• 200-MHz clock for high bandwidth
• 2-Word Burst on all accesses
• Double Data Rate (DDR) interfaces on both Read and
Write ports (data transferred at 400 MHz) @ 200 MHz
• Two input clocks (K and K) for precise DDR timing
— SRAM uses rising edges only
• Two output clocks (C and C) accounts for clock skew
and flight time mismatching
• Echo clocks (CQ and CQ) simplify data capture in
high-speed systems
• Single multiplexed address input bus latches address
inputs for both Read and Write ports
• Separate Port Selects for depth expansion
• Synchronous internally self-timed writes
• Available in x8, x9, x18, and x36 configurations
• Full data coherency, providing most current data
• Core V_DD = 1.8V (±0.1V); I/O V_DDQ = 1.4V to V_DD
• 15 × 17 × 1.4 mm 1.0-mm pitch FBGA package, 165-ball
(11 × 15 matrix)
• Variable drive HSTL output buffers
• JTAG 1149.1 compatible test access port
• Delay Lock Loop (DLL) for accurate data placement
Configurations
CY7C1410V18 – 4M x 8
CY7C1425V18 – 4M x 9
CY7C1412V18 – 2M x 18
CY7C1414V18 – 1M x 36
The CY7C1410V18, CY7C1425V18, CY7C1412V18, and
CY7C1414V18 are 1.8V Synchronous Pipelined SRAMs,
equipped with QDR™-II architecture. QDR-II architecture
consists of two separate ports to access the memory array.
The Read port has dedicated Data Outputs to support Read
operations and the Write Port has dedicated Data Inputs to
support Write operations. QDR-II architecture has separate
data inputs and data outputs to completely eliminate the need
to “turn-around” the data bus required with common I/O
devices. Access to each port is accomplished through a
common address bus. The Read address is latched on the
rising edge of the K clock and the Write address is latched on
the rising edge of the K clock. Accesses to the QDR-II Read
and Write ports are completely independent of one another. In
order to maximize data throughput, both Read and Write ports
are equipped with Double Data Rate (DDR) interfaces. Each
address location is associated with two 8-bit words
(CY7C1410V18) or 9-bit words (CY7C1425V18) or 18-bit
words (CY7C1412V18) or 36-bit words (CY7C1414V18) that
burst sequentially into or out of the device. Since data can be
transferred into and out of the device on every rising edge of
both input clocks (K and K and C and C), memory bandwidth
is maximized while simplifying system design by eliminating
bus “turn-arounds.”
Depth expansion is accomplished with Port Selects for each
port. Port selects allow each port to operate independently.
All synchronous inputs pass through input registers controlled
by the K or K input clocks. All data outputs pass through output
registers controlled by the C or C (or K or K in a single clock
domain) input clocks. Writes are conducted with on-chip
synchronous self-timed write circuitry.
Cypress Semiconductor Corporation • 3901 North First Street • San Jose, CA 95134 • 408-943-2600
Document #: 38-05592 Rev. **
Revised June 07, 2004