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CY14B512P_12 Datasheet, PDF (1/34 Pages) Cypress Semiconductor – 512-Kbit (64 K × 8) Serial (SPI) nvSRAM with Real Time Clock
CY14B512P
512-Kbit (64 K × 8) Serial (SPI) nvSRAM
with Real Time Clock
512-Kbit (64 K × 8) Serial (SPI) nvSRAM with Real Time Clock
Features
■ 512-Kbit nonvolatile static random access memory (nvSRAM)
❐ Internally organized as 64 K × 8
❐ STORE to QuantumTrap nonvolatile elements initiated
automatically on power-down (AutoStore) or by the user
using HSB pin (Hardware STORE) or SPI instruction
(Software STORE)
❐ RECALL to SRAM initiated on power-up (Power-Up
RECALL) or by serial peripheral interface (SPI) instruction
(Software RECALL)
❐ Automatic STORE on power-down with a small capacitor
■ High reliability
❐ Infinite read, write, and RECALL cycles
❐ 1 million STORE cycles to QuantumTrap
❐ Data retention: 20 years
■ Real time clock (RTC)
❐ Full featured RTC
❐ Watchdog timer
❐ Clock alarm with programmable interrupts
❐ Capacitor or battery backup for RTC
❐ Backup current of 0.35 µA (typical)
■ High-speed SPI
❐ 40 MHz clock rate – SRAM memory access
❐ 25 MHz clock rate – RTC memory access
❐ Supports SPI mode 0 (0,0) and mode 3 (1,1)
■ Write protection
❐ Hardware protection using Write Protect (WP) pin
❐ Software protection using Write Disable instruction
❐ Software block protection for 1/4, 1/2, or entire array
■ Low power consumption
❐ Single 3 V + 20%, –10% operation
❐ Average active current of 10 mA at 40 MHz operation
■ Industry standard configurations
❐ Industrial temperature
❐ 16-pin small outline integrated circuit (SOIC) package
❐ Restriction of hazardous substances (RoHS) compliant
Overview
The Cypress CY14B512P combines a 512-Kbit nvSRAM[1] with
a full-featured real time clock in a monolithic integrated circuit
with serial SPI interface. The memory is organized as 64 K words
of 8 bits each. The embedded nonvolatile elements incorporate
the QuantumTrap technology, creating the world’s most reliable
nonvolatile memory. The SRAM provides infinite read and write
cycles, while the QuantumTrap cells provide highly reliable
nonvolatile storage of data. Data transfers from SRAM to the
nonvolatile elements (STORE operation) takes place
automatically at power-down. On power-up, data is restored to
the SRAM from the nonvolatile memory (RECALL operation).
The STORE and RECALL operations can also be initiated by the
user through SPI instruction.
Logic Block Diagram
VCC
VCAP
CS
WP
SCK
HOLD
Instruction decode
Write protect
Control logic
QuantumTrap
64 K X 8
SRAM Array
64 K X 8
STORE
RECALL
Power Control
STORE/RECALL
Control
HSB
Instruction
register
D0-D7
Address
Decoder
A0-A15
RTC
Xout
X in
INT
SI
Data I/O register
MUX
SO
Status Register
Note
1. This device is referred to as nvSRAM throughout the document.
Cypress Semiconductor Corporation • 198 Champion Court
Document Number: 001-53872 Rev. *H
• San Jose, CA 95134-1709 • 408-943-2600
Revised August 13, 2012