DS-72-11 Datasheet, PDF (6/14 Pages) Cymbet Corporation – Charge Pump and Battery Management ASIC Bare Die

CHARGE PUMP CHARACTERISTICS
VDD = 2.5V to 5.5V, Ta = -40ºC to +85ºC
CHARACTERISTIC
ENABLE=VDD to Charge
Pump Active
ENABLE Falling to
Charge Pump Inactive
Charge Pump Frequency
Charge Pump
Resistance
VCHG Output Voltage
VCHG Temp. Coefficient
Charge Pump Current
Drive
Charge Pump on Voltage
(1) _{fCP = 1/tCPPER}
SYMBOL
tCPON
tCPOFF
fCP
RCP
VCP
TCCP
ICP
VENABLE
CONDITION
ENABLE to 3rd charge pump
pulse, VDD=3.3V
-
Delta VBAT, for IBAT charging
current of 1µA to 100µA
CFLY=0.1µF, CBAT=1.0µF
CFLY=0.1µF, CBAT=1.0µF,
IOUT=1µA, Temp=+25ºC
IOUT=1µA, Temp=+25ºC
IBAT=1mA
CFLY=0.1µF, CBAT=1.0µF
ENABLE=VDD
CBC910
MIN
60
0
-
150
MAX
80
UNITS
µs
1
µs
120
KHz ⁽¹⁾
300
Ω
4.075 4.125
V
-2.0
-2.4 mV/ºC
1.0
-
mA
2.5
-
V
ADDITIONAL CHARACTERISTICS
Ta = -40ºC to +85ºC
CHARACTERISTIC SYMBOL
CONDITION
VBAT Cutoff Threshold
Cutoff Temp. Coefficient
VBAT Cutoff Delay Time
VOUT Dead Time, VDD
Rising ⁽²⁾
VOUT Dead Time, VDD
Falling ⁽²⁾
Bypass Resistance
VBATCO
TCCO
tCOOFF
tRSBR
tRSBF
ROUT
IOUT=1µA
-
VBAT from 40mV above to
20mV below VBATCO
IOUT=1µA
IOUT=1mA
VBAT=4.1V
VBAT=4.1V
-
LIMITS
MIN MAX
2.75 3.25
+1
+2
18
-
UNITS
V
mV/ºC
ms
0.1
7.5
µs
0.2
65
µs
-
2.5
Ω
(2) _{Dead time is the time period when the VOUT pin is floating. Size the holding capacitor accordingly.}
Note: All specifications contained within this document are subject to change without notice
©2012-2014 Cymbet Corporation • Tel: [phone] • www.cymbet.com
DS-72-11 Rev A

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