CT8124-T52 Datasheet, PDF (4/11 Pages) CT Micro International Corporation – N-Channel Enhancement MOSFET

CT8124-T52
N-Channel Enhancement MOSFET
Drain-Source Diode Characteristics
Symbol
Parameters
Test Conditions
VSD
Body Diode Forward Voltage
VGS = 0V, ISD = 4.5A
ISD
Body Diode Continuous Current
Min Typ Max Units Notes
-
-
1.2
V
-
-
4.5
A
1
Note:
℃ 1.The power dissipation is limited by 150 junction temperature.
2.The data tested by pulsed , pulse width ≦ 300μs , duty cycle ≦ 2%
3. Thermal Resistance follow JESD51-3.
CT Micro
Proprietary & Confidential
Page 4
Rev 3
Aug, 2015