CT8124-T52 Datasheet, PDF (3/11 Pages) CT Micro International Corporation – N-Channel Enhancement MOSFET

CT8124-T52
N-Channel Enhancement MOSFET
Electrical Characteristics TA = 25°C (unless otherwise specified)
Static Characteristics
Symbol
Parameters
BVDSS Drain-Source Breakdown Voltage
IDSS
Drain-Source Leakage Current
IGSS
Gate-Source Leakage Current
Test Conditions
VGS= 0V, ID= 250µA
VDS = 20V, VGS = 0V
VGS = ±8V, VDS = 0V
Min Typ Max Units Notes
20
-
-
V
-
-
1
µA
-
-
±100
nA
On Characteristics
Symbol
Parameters
RDS(ON)
Drain-Source On-Resistance
VGS(th)
Gate-Source Threshold Voltage
Test Conditions
VGS = 4.5V, ID = 5.0A
VGS = 2.5V, ID =3.5A
VGS = 1.8V, ID =2.8A
VGS = VDS, ID =250µA
Min Typ Max Units Notes
-
23
33
mΩ
2
-
27
40
mΩ
2
-
34
51
mΩ
2
0.4
-
1.5
V
2
Dynamic Characteristics
Symbol
Parameters
CISS
Input Capacitance
COSS
Output Capacitance
CRSS
Reverse Transfer Capacitance
Test Conditions
VGS =0V,
VDS =10V
f=1MHz
Min Typ Max Units Notes
-
599
-
-
81
-
pF
-
73
-
Switching Characteristics
Symbol
Parameters
TD(ON)
Turn-On Delay Time
TR
Rise Time
TD(OFF)
Turn-Off Delay Time
TF
Fall Time
QG
Total Gate Charge
QGS
Gate-Source Charge
QGD
Gate-Drain (Miller) Charge
Test Conditions
VDS = 10V ,
VGS = 4.5V,
RG = 6Ω,
ID =3.6A
VDS = 10V ,
VGS = 4.5V,
ID =4.5A
Min Typ Max Units Notes
-
3.5
-
-
23
-
ns
-
39
-
-
24
-
-
7.5
-
-
1
-
nC
-
2
-
CT Micro
Proprietary & Confidential
Page 3
Rev 3
Aug, 2015