CT8124-T52 Datasheet, PDF (1/11 Pages) CT Micro International Corporation – N-Channel Enhancement MOSFET

CT8124-T52
N-Channel Enhancement MOSFET
Features
• Drain-Source Breakdown Voltage VDSS = 20V
• Drain-Source On-Resistance
RDS(ON) 23mΩ, at VGS= 4.5V, ID= 5.0A
RDS(ON) 27mΩ, at VGS= 2.5V, ID= 3.5A
RDS(ON) 34mΩ, at VGS= 1.8V, ID= 2.8A
℃ • Continuous Drain Current at TC=25 ID = 9.0A
• Advanced high cell density Trench Technology
• RoHS Compliance & Halogen Free
Description
The CT8124 –T52 uses high performance Trench
Technology to provide excellent RDS(ON)and low gate
charge which is suitable for most of the synchronous
buck converter applications .
Applications
• Notebook
• High side switching
• Power Management
Package Outline
Schematic
Drain
Gate
Source
Drain
Gate
Source
CT Micro
Proprietary & Confidential
Page 1
Rev 3
Aug, 2015