CT2306-R3 Datasheet, PDF (3/10 Pages) CT Micro International Corporation – N-Channel Enhancement MOSFET

CT2306-R3
N-Channel Enhancement MOSFET
Electrical Characteristics TA = 25°C (unless otherwise specified)
Static Characteristics
Symbol
Parameters
BVDSS Drain-Source Breakdown Voltage
IDSS
Drain-Source Leakage Current
IGSS
Gate-Source Leakage Current
Test Conditions
VGS= 0V, ID= 250µA
VDS = 30V, VGS = 0V
VGS = ±20V, VDS = 0V
Min Typ Max Units Notes
30
-
-
V
-
-
1
µA
-
-
±100
nA
On Characteristics
Symbol
Parameters
RDS(ON)
Drain-Source On-Resistance
VGS(th)
Gate-Source Threshold Voltage
Test Conditions
VGS = 10V, ID = 4.0A
VGS = 4.5V, ID = 3.5A
VGS = VDS, ID =250µA
Min Typ Max Units Notes
-
25
45
mΩ
3
-
36
50
mΩ
1.0
---
3.0
V
3
Dynamic Characteristics
Symbol
Parameters
CISS
Input Capacitance
COSS
Output Capacitance
CRSS
Reverse Transfer Capacitance
Test Conditions
VGS =0V,
VDS =15V
f=1MHz
Min Typ Max Units Notes
-
382
-
-
65
-
pF
-
16
-
Switching Characteristics
Symbol
Parameters
TD(ON)
Turn-On Delay Time
TR
Rise Time
TD(OFF)
Turn-Off Delay Time
TF
Fall Time
QG
Total Gate Charge
QGS
Gate-Source Charge
QGD
Gate-Drain (Miller) Charge
Test Conditions
VDS = 15V ,
VGS = 10V,
RG = 3Ω,
ID =3.4A
VDS = 15V ,
VGS = 15V,
ID =3.4A
Min Typ Max Units Notes
-
9
-
-
15
-
Fig
ns
-
32
-
8&9
-
3
-
-
6.4
-
Fig
-
3
-
nC
6&7
-
2.5
-
CT Micro
Proprietary & Confidential
Page 3
Rev 2
Jun, 2015