CT2306-R3 Datasheet, PDF (1/10 Pages) CT Micro International Corporation – N-Channel Enhancement MOSFET

CT2306-R3
N-Channel Enhancement MOSFET
Features
• Drain-Source Breakdown Voltage VDSS 30 V
• Drain-Source On-Resistance
• RDS(ON) 25mΩ, at VGS= 10V, ID=4.0A
RDS(ON) 36mΩ, at VGS= 4.5V, ID= 3.5A
℃ • Continuous Drain Current at TA=25 ID = 4.7A
• Advanced high cell density Trench Technology
• RoHS Compliance & Halogen Free
Description
The CT2306-R3 uses high performance Trench
Technology to provide excellent RDS(ON) and low gate
charge which is suitable for most of the synchronous
buck converter applications.
Applications
• Power Management
• DC-DC Converter
• Load Switch
Package Outline
Schematic
Drain
Drain
Gate
Source
Gate
Source
CT Micro
Proprietary & Confidential
Page 1
Rev 2
Jun, 2015