CT2306-R3 Datasheet, PDF (2/10 Pages) CT Micro International Corporation – N-Channel Enhancement MOSFET

CT2306-R3
N-Channel Enhancement MOSFET
Absolute Maximum Rating at 25^oC
Symbol
Parameters
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
ID
℃ Continuous Drain Current @TA=25
IDM
Pulsed Drain Current
PD
℃ Total Power Dissipation @TA=25
TSTG
Storage Temperature Range
TJ
Operating Junction Temperature Range
Thermal Characteristics
Symbol
Parameters
RÓ¨JA
Thermal Resistance
Junction-Ambient
Test Conditions
Test Conditions
30
±20
4.7
20
1.3
-55 to 150
-55 to 150
Min Notes
V
V
A
1
A
1
W
2
°C
°C
Min Typ Max Units Notes
--
125
--
o_{C /W 1,4}
CT Micro
Proprietary & Confidential
Page 2
Rev 2
Jun, 2015