CMF20120D Datasheet, PDF (8/13 Pages) Cree, Inc – Silicon Carbide Power MOSFET

Electrical Characteristics
Symbol
Parameter
V(BR)DSS Drain-Source Breakdown Voltage
VGS(th) Gate Threshold Voltage
Min.
1200
IDSS
IGSS
R_DS(on)
Zero Gate Voltage Drain Current
Gate-Source Leakage Current
Drain-Source On-State Resistance
gfs
Ciss
Coss
Crss
td(on)i
tr
td(off)i
tfi
EON
EOff
Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
(25ºC)
(125ºC)
(25ºC)
(125ºC)
Typ.
2.5
1.8
1
10
80
95
7.3
6.8
1915
120
13
17.2
13.6
62
35.6
530
422
320
329
Max. Unit
Test Conditions
4
100
250
250
110
130
V VGS = 0V, ID = 100μA
VDS = VGS, ID = 1mA, TJ = 25ºC
V
VDS = VGS, ID = 1mA, TJ = 125ºC
VDS = 1200V, VGS = 0V, TJ = 25ºC
μA
VDS = 1200V, VGS = 0V, TJ = 125ºC
nA VGS = 20V, VDS = 0V
VGS = 20V, ID = 20A, TJ = 25ºC
mΩ
VGS = 20V, ID = 20A, TJ = 125ºC
VDS= 20V, IDS= 20A, TJ = 25ºC
S
VDS= 20V, IDS= 20A, TJ = 125ºC
VGS = 0V
pF ^{VDS = 800V}
f = 1MHz
VAC = 25mV
Note
1
fig. 3
fig. 5
VDD = 800V
ns _{VGS = -2/20V}
ID = 20A
RG = 6.8Ω
μJ L = 856μH
Per JEDEC24 Page 27
μJ
fig. 12
RG
Internal Gate Resistance
5
Ω VGS = 0V, f = 1MHz, VAC = 25mV
NOTES: 1. The recommended on-state V_GS is +20V and the recommended off-state VGS is between -2V and -5V
Reverse Diode Characteristics
Symbol Parameter
Vsd
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
Irrm
Peak Reverse Recovery Current
Thermal Characteristics
Typ.
3.5
3.1
220
142
2.3
Max.
Unit
V
ns
nC
A
Test Conditions
VGS = -5V, IF^=10A, TJ = 25ºC
VGS = -2V, IF^=10A, TJ = 25ºC
VGS = -5V, IF=20A, TJ = 25ºC
VR = 800V,
diF/dt= 100A/μs
Note
fig. 13,14
Symbol Parameter
RθJC
Thermal Resistance from Junction to Case
RθCS
Case to Sink, w/ Thermal Compound
RθJA
Thermal Resistance From Junction to Ambient
Typ.
0.58
0.25
Max.
0.7
40
Unit
°C/W
Test Conditions
Note
fig. 6
Gate Charge Characteristics
Symbol Parameter
Qgs
Gate to Source Charge
Qgd
Gate to Drain Charge
Qg
Gate Charge Total
Typ.
23.8
43.1
90.8
Max.
Unit
Test Conditions
VDD = 800V
nC ID =20A
VGS = -2/20V Per JEDEC24-2
Note
fig.9
8
CMF20120D Rev. -