CMF20120D Datasheet, PDF (7/13 Pages) Cree, Inc – Silicon Carbide Power MOSFET

resistance and current drive capability are not carefully considered. It is critical that
the gate driver possess high peak current capability and low output resistance along
with adequate voltage swing.
A significant benefit of the SiC MOSFET is the elimination of the tail current observed
in silicon IGBTs. However, it is very important to note that the current tail does
provide a certain degree of parasitic dampening during turn-off. Additional ringing and
overshoot is typically observed when silicon IGBTs are replaced with SiC MOSFETs. The
additional voltage overshoot can be high enough to destroy the device. Therefore, it
is critical to manage the output interconnection parasitics (and snubbers) to keep the
ringing and overshoot from becoming problematic.
ESD RATINGS
ESD Test
ESD-HBM
ESD-MM
ESD-CDM
Total Devices Sampled
All Devices Passed 1000V
All Devices Passed 400V
All Devices Passed 1000V
Resulting Classification
2 (>2000V)
C (>400V)
IV (>1000V)
7
CMF20120D Rev. -