CMF20120D Datasheet, PDF (2/13 Pages) Cree, Inc – Silicon Carbide Power MOSFET

CMF20120D-Silicon Carbide Power MOSFET
Z-FET^™ MOSFET
N-Channel Enhancement Mode
Features
Package
V_DS
= 1200 V
R_DS(on)
= 80 mΩ
I_D(MAX)@T_C=25°C = 33 A
• Industry Leading R_DS(on)
• High Speed Switching
• Low Capacitances
• Easy to Parallel
• Simple to Drive
• Pb-Free Lead Plating, ROHS Compliant,
Halogen Free
Benefits
TO-247-3
DD
G^G
S_S
• Higher System Efficiency
• Reduced Cooling Requirements
• Avalanche Ruggedness
• Increased System Switching Frequency
Applications
Part Number
CMF20120D
Package
TO-247-3
• Solar Inverters
• High Voltage DC/DC Converters
• Motor Drives
Maximum Ratings
Symbol
Parameter
Value Unit
Test Conditions
Note
I_D
Continuous Drain Current
I_Dpulse Pulsed Drain Current
E_AS
Single Pulse Avalanche Energy
E_AR
Repetitive Avalanche Energy
33
V_GS@20V, T_C = 25˚C
A
17
V_GS@20V, T_C = 100˚C
78
A ^{Pulse width tP limited by Tjmax}
T_C = 25˚C
2.2
J ^{ID = 20A, VDD = 50 V,}
L = 9.5 mH
1.5
J t_AR limited by T_jmax
I_AR
Repetitive Avalanche Current
20
A ^{ID = 20A, VDD = 50 V, L = 3 mH}
t_AR limited by Tjmax
V_GS Gate Source Voltage
-5/+25 V
P_tot
Power Dissipation
T_J , T_stg Operating Junction and Storage Temperature
T_L
Solder Temperature
M_d
Mounting Torque
150
-55 to
+125
260
1
8.8
W T_C=25˚C
˚C
˚C 1.6mm (0.063”) from case for 10s
Nm
lbf-in
M3 or 6-32 screw
2
CMF20120D Rev. -