CGH40006P Datasheet, PDF (7/14 Pages) Cree, Inc – 6 W, RF Power GaN HEMT

Typical Noise Performance
Simulated Minimum Noise Figure and Noise Resistance vs Frequency of the CGH40006P
V_DD = 28 V, I_DQ = 100 mA
Electrostatic Discharge (ESD) Classifications
Parameter
Human Body Model
Charge Device Model
Symbol
HBM
CDM
Class
1A > 250 V
1 < 200 V
Test Methodology
JEDEC JESD22 A114-D
JEDEC JESD22 C101-C
Copyright © 2009-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
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CGH40006P Rev 3.0
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: [phone]
Fax: [phone]
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