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| CGH40006P Datasheet, PDF (1/14 Pages) Cree, Inc – 6 W, RF Power GaN HEMT | |||
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CGH40006P
6 W, RF Power GaN HEMT
Creeâs CGH40006P is an unmatched, gallium nitride (GaN) high electron mobility
transistor (HEMT). The CGH40006P, operating from a 28 volt rail, offers a general
purpose, broadband solution to a variety of RF and microwave applications. GaN
HEMTs offer high efficiency, high gain and wide bandwidth capabilities making the
CGH40006P ideal for linear and compressed amplifier circuits. The transistor is
available in a solder-down, pill package.
PackaPgNeâsT:yCpGesH: 4404000160P9
FEATURES
⢠Up to 6 GHz Operation
⢠13 dB Small Signal Gain at 2.0 GHz
⢠11 dB Small Signal Gain at 6.0 GHz
⢠8 W typical at PIN = 32 dBm
⢠65 % Efficiency at PIN = 32 dBm
⢠28 V Operation
APPLICATIONS
⢠2-Way Private Radio
⢠Broadband Amplifiers
⢠Cellular Infrastructure
⢠Test Instrumentation
⢠Class A, AB, Linear amplifiers suitable for
OFDM, W-CDMA, EDGE, CDMA waveforms
Subject to change without notice.
www.cree.com/rf
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