CGH40006P Datasheet, PDF (2/14 Pages) Cree, Inc – 6 W, RF Power GaN HEMT

Absolute Maximum Ratings (not simultaneous) at 25˚C Case Temperature
Parameter
Symbol
Rating
Drain-Source Voltage
V_DSS
84
Gate-to-Source Voltage
V_GS
-10, +2
Storage Temperature
T_STG
-65, +150
Operating Junction Temperature
T_J
225
Maximum Forward Gate Current
I_GMAX
2.1
Maximum Drain Current¹
I_DMAX
0.75
Soldering Temperature²
T_S
245
Thermal Resistance, Junction to Case³
R_θJC
9.5
Case Operating Temperature³
T_C
-40, +150
Note:
1 _{Current limit for long term, reliable operation}
2 _{Refer to the Application Note on soldering at www.cree.com/RF/Document-Library}
3 _{Measured for the CGH40006P at PDISS = 8 W.}
Electrical Characteristics (T_C = 25˚C)
Characteristics
DC Characteristics¹
Symbol
Min.
Gate Threshold Voltage
V_GS(th)
-3.8
Gate Quiescent Voltage
V_GS(Q)
–
Saturated Drain Current
I_DS
1.7
Drain-Source Breakdown Voltage
V_BR
120
RF Characteristics² (T_C = 25˚C, F₀ = 2.0 GHz unless otherwise noted)
Small Signal Gain
G_SS
11.5
Power Output at P_IN = 32 dBm
P_OUT
7.0
Drain Efficiency³
η
53
Output Mismatch Stress
VSWR
–
Dynamic Characteristics
Input Capacitance
C_GS
–
Output Capacitance
C_DS
–
Feedback Capacitance
C_GD
–
Notes:
1 _{Measured on wafer prior to packaging.}
2 _{Measured in CGH40006P-AMP.}
3 _{Drain Efficiency = POUT / PDC}
Typ.
Max.
-3.0
-2.3
-2.7
–
2.1
–
–
–
13
–
9
–
65
–
–
10 : 1
3.0
–
1.1
–
0.1
–
Units
Volts
Volts
˚C
˚C
mA
A
˚C
˚C/W
˚C
Conditions
25˚C
25˚C
25˚C
25˚C
85˚C
Units
Conditions
V_DC
V_DS = 10 V, I_D = 2.1 mA
V_DC
V_DS = 28 V, I_D = 100 mA
A
V_DS = 6.0 V, V_GS = 2.0 V
V_DC
V_GS = -8 V, I_D = 2.1 mA
dB
V_DD = 28 V, I_DQ = 100 mA
W
V_DD = 28 V, I_DQ = 100 mA
%
V_DD = 28 V, I_DQ = 100 mA, P_IN = 32 dBm
No damage at all phase angles,
Y
V_DD = 28 V, I_DQ = 100 mA,
P_IN = 32 dBm
pF
V_DS = 28 V, V_gs = -8 V, f = 1 MHz
pF
V_DS = 28 V, V_gs = -8 V, f = 1 MHz
pF
V_DS = 28 V, V_gs = -8 V, f = 1 MHz
Copyright © 2009-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
2
CGH40006P Rev 3.0
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: [phone]
Fax: [phone]
www.cree.com/rf