CMPA0060002F Datasheet, PDF (5/9 Pages) Cree, Inc – 2 W, 20 MHz - 6000 MHz, GaN MMIC Power Amplifier

General Device Information
The CMPA0060002F is a GaN HEMT MMIC Distributed Driver Amplifier, which operates between 20 MHz - 6.0 GHz. The ampli-
fier typically provides 17 dB of small signal gain and 2 W saturated output power with an associated power added efficiency of better
than 20 %. The wideband amplifier’s input and output are internally matched to 50 Ohm. The amplifier requires bias from appropriate
Bias-T’s, through the RF input and output ports.
The CMPA0060002F is provided in a flange package format. The input and output connections are gold plated to enable gold
bond wire attach at the next level assembly.
The measurements in this data sheet were taken on devices wire-bonded to the test fixture with 2 mil gold bond wires. The
CMPA0060002F-AMP and the device were then measured using external Bias-T’s, (Aeroflex: 8800, SMF3-12; TECDIA: AMPT-06M20 or
similar), as shown in Figure 2. The Bias-T’s were included in the calibration of the test system. All other losses associated with the test
fixture are included in the measurements.
V_GG
V_DD
RF In
RF Out
Input Bias T
Output Bias T
CMMPPAA2050660002F mounted
in the test fixture
Figure 2. Typical test system setup required for measuring CMPA0060002F-AMP
Electrostatic Discharge (ESD) Classifications
Parameter
Human Body Model
Charge Device Model
Symbol
HBM
CDM
Class
1A (> 250 V)
II (200 < 500 V)
Test Methodology
JEDEC JESD22 A114-D
JEDEC JESD22 C101-C
Copyright © 2009-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective owners and do not imply specific
product and/or vendor endorsement, sponsorship or association.
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CMPA0060002F Rev 3.0
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: [phone]
Fax: [phone]
www.cree.com/rf