CMPA0060002F Datasheet, PDF (2/9 Pages) Cree, Inc – 2 W, 20 MHz - 6000 MHz, GaN MMIC Power Amplifier

Absolute Maximum Ratings (not simultaneous) at 25˚C
Parameter
Symbol
Drain-source Voltage
Gate-source Voltage
Storage Temperature
Operating Junction Temperature
Maximum Forward Gate Current
Soldering Temperature¹
Screw Torque
V_DSS
V_GS
T_STG
T_J
I_GMAX
T_S
τ
Thermal Resistance, Junction to Case
R_θJC
Case Operating Temperature^2,3
T_C
Note:
1 _{Refer to the Application Note on soldering at www.cree.com/RF/Document-Library}
2 _{Measured for the CMPA0060002F at PDISS = 2 W.}
Rating
84
-10, +2
-65, +150
225
4
245
40
4.3
-40, +150
Electrical Characteristics (Frequency = 20 MHz to 6.0 GHz unless otherwise stated; T_C = 25˚C)
Units
VDC
VDC
˚C
˚C
mA
˚C
in-oz
˚C/W
˚C
Characteristics
DC Characteristics
Gate Threshold Voltage¹
Gate Quiescent Voltage
Saturated Drain Current
RF Characteristics
Small Signal Gain
Input Return Loss
Output Return Loss
Power Output
Power Added Efficiency
Power Gain
Symbol
V_(GS)TH
V_(GS)Q
I_DC
S21
S11
S22
P_OUT
PAE
G_P
Min.
-3.8
–
–
13.5
–
–
2
–
10
Typ.
-3.0
-2.7
1.4
17
-9
-9
3
23
–
Max.
-2.7
–
–
21.5
-5
-5
–
–
–
Units
V
VDC
A
dB
dB
dB
W
%
dB
Output Mismatch Stress
VSWR
–
–
5:1
Y
Notes:
1 _{The device will draw approximately 20-25 mA at pinch off due to the internal circuit structure.}
Conditions
V_DS = 20 V, ∆I_D = 2 mA
V_DD = 28 V, I_DQ = 100 mA
V_DS = 6.0 V, V_GS = 2.0 V
V_DD = 28 V, I_DQ = 100 mA
V_DD = 28 V, I_DQ = 100 mA
V_DD = 28 V, I_DQ = 100 mA
V_DD = 28 V, I_DQ = 100 mA,
Frequency = 4.0 GHz, P_IN = 23 dBm
V_DD = 28 V, I_DQ = 100 mA,
Frequency = 4.0 GHz, P_IN = 23 dBm
V_DD = 28 V, I_DQ = 100 mA,
Frequency = 4.0 GHz, P_IN = 23 dBm
No damage at all phase angles,
V_DD = 28 V, I_DQ = 100 mA,
P_IN = 23 dBm
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product and/or vendor endorsement, sponsorship or association.
2
CMPA0060002F Rev 3.0
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: [phone]
Fax: [phone]
www.cree.com/rf