CMPA0060002F Datasheet, PDF (1/9 Pages) Cree, Inc – 2 W, 20 MHz - 6000 MHz, GaN MMIC Power Amplifier

CMPA0060002F
2 W, 20 MHz - 6000 MHz, GaN MMIC Power Amplifier
Cree’s CMPA0060002F is a gallium nitride (GaN) High Electron Mobility
Transistor (HEMT) based monolithic microwave integrated circuit (MMIC).
GaN has superior properties compared to silicon or gallium arsenide, including
higher breakdown voltage, higher saturated electron drift velocity and higher
thermal conductivity. GaN HEMTs also offer greater power density and wider
bandwidths compared to Si and GaAs transistors. This MMIC employs a
distributed (traveling-wave) amplifier design approach, enabling extremely
wide bandwidths to be achieved in a small footprint screw-down package
featuring a copper-tungsten heat sink.
PaPckNa:gCeMTPyApe0:076800000129F
Typical Performance Over 20 MHz - 6.0 GHz (T_C = 25˚C)
Parameter
Gain
20 MHz
19.9
0.5 GHz
18.8
1.0 GHz
17.8
2.0 GHz
16.8
3.0 GHz
16.8
4.0 GHz
17.5
5.0 GHz
18.5
Saturated
Output
Power,
P1
SAT
4.3
4.1
4.5
4.2
3.7
3.9
4.8
Power
Gain
@
P1
SAT
14.7
13.1
12.6
12.2
12.6
10.9
12.2
PAE
@
P1
SAT
34
28
29
28
24
26
33
Note¹: P_SAT is defined as the RF output power where the device starts to draw positive gate current in the range of 2-4 mA.
Note²: V_DD = 28 V, I_DQ = 100 mA
6.0 GHz
16.5
3.7
9.5
20
Units
dB
W
dB
%
Features
• 17 dB Small Signal Gain
• 3 W Typical P_SAT
• Operation up to 28 V
• High Breakdown Voltage
• High Temperature Operation
• 0.5” x 0.5” total product size
Applications
• Ultra Broadband Amplifiers
• Fiber Drivers
• Test Instrumentation
• EMC Amplifier Drivers
Subject to change without notice.
www.cree.com/rf
Figure _1.
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