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CMPA801B025D Datasheet, PDF (4/7 Pages) Cree, Inc – 25 W, 8.0 - 11.0 GHz, GaN MMIC, Power Amplifier
Block Diagram Showing Additional Capacitors for Operation Over 8.0 to 11.0 GHz
C2
C4
C10
Vd
C9
C1
C3
Vg
VG1_B VD1_B
VG2_B VD2_B
RF_In 2
1
1
2 RF_Out
VG1_A VD1_A
VG2_A VD2_A
C11
C5
C7
C6
C8
C12
Designator
C1,C2,C3,C4,C5,C6,C7,C8
C9,C10,C11,C12
Description
CAP, 51pF, +/-10%, SINGLE LAYER, 0.035”, Er 3300, 100V, Ni/
Au TERMINATION
CAP, 680pF, +/-10%, SINGLE LAYER, 0.070”, Er 3300, 100V,
Ni/Au TERMINATION
Quantity
8
4
Notes:
1 The input, output and decoupling capacitors should be attached as close as possible to the
die- typical distance is 5 to 10 mils with a maximum of 15 mils.
2 The MMIC die and capacitors should be connected with 2 mil gold bond wires.
Copyright © 2010-2014 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree
and the Cree logo are registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their
respective owners and do not imply specific product and/or vendor endorsement, sponsorship or association.
4
CMPA801B025D Rev 1.0
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf