CMPA801B025D Datasheet, PDF (1/7 Pages) Cree, Inc – 25 W, 8.0 - 11.0 GHz, GaN MMIC, Power Amplifier

CMPA801B025D
25 W, 8.0 - 11.0 GHz, GaN MMIC, Power Amplifier
Cree’s CMP801B025D is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based
monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or
gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity and higher
thermal conductivity. GaN HEMTs also offer greater power density and wider bandwidths compared to
Si and GaAs transistors. This MMIC contains a two-stage reactively matched amplifier design approach
enabling very wide bandwidths to be achieved.
Typical Performance Over 8.0-11.0 GHz (T_C = 25˚C)
Parameter
Small Signal Gain
P_OUT @ P_IN = 25 dBm
Power Gain @ P_IN = 25 dBm
PAE @ P_IN = 25 dBm
8.0 GHz
30
32
20
41
9.0 GHz
28
41
21
44
10.0 GHz
27
34
20
37
11.0 GHz
29
47
21
41
Units
dB
W
dB
%
Features
Applications
• 28 dB Small Signal Gain
• 35 W Typical P_SAT
• Operation up to 28 V
• High Breakdown Voltage
• High Temperature Operation
• Size 0.142 x 0.188 x 0.004 inches
• Point to Point Radio
• Communications
• Test Instrumentation
• EMC Amplifiers
Subject to change without notice.
www.cree.com/rf
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