CMPA0060025D Datasheet, PDF (4/7 Pages) Cree, Inc – 25 W, 20 MHz - 6.0 GHz, GaN MMIC, Power Amplifier

Functional Block Diagram
This device employs a wideband amplifier topology.It has an internal termination for the Gate, which works well
over 1.0-6.0 GHz. For operation below 1.0 GHz an external termination is required. This termination needs to be DC-
blocked and suitable to withstand up to 2 W of RF power. (Refer to the reference design section for the LF-termination
in this data sheet for more details). The circuits also require external wideband Bias –T’s to supply voltage to the Gate
and Drain. The Bias-T at the Drain needs to be designed to handle 50 V and up to 2.0 A.
Vd
Vg
3
DC
DC
RF
&
RF IN
1
2
2
RF 1
BIASTEE
2
2
3
RF OUT
DC
DC
&
RF
1
1 RF
2
BIASTEE
1
GATE TERMINATION
Figure 1.
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and the Cree logo are registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their
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CMPA0060025D Rev 1.2
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: [phone]
Fax: [phone]
www.cree.com/RF