CMPA0060025D Datasheet, PDF (2/7 Pages) Cree, Inc – 25 W, 20 MHz - 6.0 GHz, GaN MMIC, Power Amplifier

Absolute Maximum Ratings (not simultaneous) at 25˚C
Parameter
Symbol
Rating
Drain-source Voltage
V_DSS
84
Gate-source Voltage
V_GS
-10, +2
Storage Temperature
T_STG
-65, +150
Operating Junction Temperature
T_J
225
Maximum Forward Gate Current
I_GMAX
12
Thermal Resistance, Junction to Case (packaged)¹
R_θJC
3.0
Input Power²
P_IN
36
Note1 Eutectic die attach using 80/20 AuSn solder mounted to a 10 mil thick CuMo carrier.
Note² Limit for internal resistor only. Thermal dissipation may be exceeded at this level.
Units
VDC
VDC
˚C
˚C
mA
˚C/W
dBm
Electrical Characteristics (Frequency = 20 MHz to 6.0 GHz unless otherwise stated; T_C = 25˚C)
Characteristics
DC Characteristics
Symbol
Min.
Typ.
Max.
Units
Conditions
Gate Threshold Voltage¹
V_(GS)TH
-3.8
-3.0
-2.7
V
V_DS = 20 V, ∆I_D = 6 mA
Gate Quiescent Voltage
V_(GS)Q
–
-2.7
–
VDC
V_DD = 50 V, I_DQ = 500 mA
Saturated Drain Current²
RF Characteristics
I_DS
–
12
–
A
V_DS = 12.0 V, V_GS = 2.0 V
Small Signal Gain
S21
–
18
–
dB
V_DD = 50 V, I_DQ = 500 mA
Input Return Loss
S11
–
9
–
dB
V_DD = 50 V, I_DQ = 500 mA
Output Return Loss
S22
–
7
–
dB
V_DD = 50 V, I_DQ = 500 mA
Output Power, 1
Output Power, 2
Output Power, 3
Power Added Efficiency, 1
Power Added Efficiency, 2
Power Added Efficiency, 3
Power Gain
P_OUT1
17
29
–
W
P_OUT2
23
30
–
W
P_OUT3
23
31
–
W
PAE1
18
33
–
%
PAE2
23
34
–
%
PAE3
22
33
–
%
G_P
–
13
–
dB
Output Mismatch Stress
VSWR
–
–
5:1
Y
Notes:
1 _{The device will draw approximately 55-70 mA at pinch off due to the internal circuit structure.}
2 _{Scaled from PCM data.}
3 _{All data pulsed with Pulse Width at 10µS, 1% Duty Cycle}
3 _{Data measured into a 15 dB output load with a maximum return loss.}
V_DD = 50 V, I_DQ = 500 mA,
P_IN = 32 dBm, Freq = 4.0 GHz
V_DD = 50 V, I_DQ = 500 mA,
P_IN = 32 dBm, Freq = 5.0 GHz
V_DD = 50 V, I_DQ = 500 mA,
P_IN = 32 dBm, Freq = 6.0 GHz
V_DD = 50 V, I_DQ = 500 mA,
P_IN = 32 dBm, Freq = 4.0 GHz
V_DD = 50 V, I_DQ = 500 mA,
P_IN = 32 dBm, Freq = 5.0 GHz
V_DD = 50 V, I_DQ = 500 mA,
P_IN = 32 dBm, Freq = 6.0 GHz
V_DD = 50 V, I_DQ = 500 mA,
P_IN = 32 dBm
No damage at all phase angles,
V_DD = 50 V, I_DQ = 500 mA,
P_IN = 32 dBm
Copyright © 2009-2014 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree
and the Cree logo are registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their
respective owners and do not imply specific product and/or vendor endorsement, sponsorship or association.
2
CMPA0060025D Rev 1.2
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: [phone]
Fax: [phone]
www.cree.com/RF