CMPA0060025D Datasheet, PDF (1/7 Pages) Cree, Inc – 25 W, 20 MHz - 6.0 GHz, GaN MMIC, Power Amplifier

CMPA0060025D
25 W, 20 MHz - 6.0 GHz, GaN MMIC, Power Amplifier
Cree’s CMPA0060025D is a gallium nitride (GaN) High Electron Mobility
Transistor (HEMT) based monolithic microwave integrated circuit
(MMIC). GaN has superior properties compared to silicon or gallium
arsenide, including higher breakdown voltage, higher saturated electron
drift velocity and higher thermal conductivity. GaN HEMTs also offer
greater power density and wider bandwidths compared to Si and GaAs
transistors. This MMIC enables very wide bandwidths.
PN: _CMPA0060025D
Typical Performance Over 1.0-6.0 GHz (T_C = 25˚C)
Parameter
Gain
Output Power @ P_IN 32 dBm
Associated Gain @ P_IN 32 dBm
PAE @ P_IN 32 dBm
Note: V_DD = 50 V, I_D = 500 mA
1.0 GHz
18.0
34
13.3
54
2.0 GHz
18.0
38
13.9
45
3.0 GHz
18.5
42
14.2
46
4.0 GHz
18.0
29
12.6
33
5.0 GHz
17.0
30
13.1
34
6.0 GHz
17.0
31
12.9
33
Units
dB
W
dB
%
Features
Applications
• 18 dB Small Signal Gain
• 30 W Typical P_SAT
• Operation up to 50 V
• High Breakdown Voltage
• High Temperature Operation
• Size 0.157 x 0.094 x 0.004 inches
• Ultra Broadband Amplifiers
• Test Instrumentation
• EMC Amplifier Drivers
Subject to change without notice.
www.cree.com/RF
1