CCS050M12CM2 Datasheet, PDF (4/8 Pages) Cree, Inc – 1.2kV, 50A Silicon Carbide Six-Pack (Three Phase) Module

Typical Performance
200
Conditions:
T_J = -40 °C
t_p < 50 µs
160
V_GS = 20 V
V_GS = 15 V
200
Conditions:
T_J = 25 °C
t_p < 50 µs
160
V_GS = 20 V
V_GS = 15 V
120
120
80
V_GS = 10 V
40
V_GS = 5 V
0
0
3
6
9
12
15
Drain-Source Voltage, V_DS (V)
Figure 1. Typical Output Characteristics TJ = -40ºC
80
V_GS = 10 V
40
V_GS = 5 V
0
0
3
6
9
12
15
Drain-Source Voltage, V_DS (V)
Figure 2. Typical Output Characteristics TJ = 25ºC
200
Conditions:
T_J = 150 °C
t_p < 50 µs
160
120
V_GS = 20 V
V_GS = 15 V
V_GS = 10 V
80
40
0
0
V_GS = 5 V
3
6
9
12
15
Drain-Source Voltage, V_DS (V)
Figure 3. Typical Output Characteristics TJ = 150ºC
60
Conditions:
V_GS = 20 V
50
t_p < 50 µs
40
T_J = 150 °C
T_J = 125 °C
30
T_J = 25 °C
T_J = -40 °C
20
10
0
0
25
50
75
100
Drain Source Current, I_DS (A)
Figure 5. Normalized On-Resistance vs. Drain Current
For Various Temperatures
2.0
Conditions:
1.8
I_DS = 50 A
V_GS = 20 V
1.6
t_p < 50 µs
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
-50
-25
0
25
50
75
100 125 150
Junction Temperature, T_J (°C)
Figure 4. Normalized On-Resistance vs. Temperature
100
90
80
70
60
50
40
30
20
10
0
12
T_J = -40 °C
T_J = 25 °C
Conditions:
I_DS = 50 A
t_p < 50 µs
T_J = 150 °C
13
14
15
16
17
18
19
20
Gate Source Voltage, V_GS (V)
Figure 6. Normalized On-Resistance vs. Gate-Source
Voltage for Various Temperatures
4
CCS050M12CM2,Rev. -