CCS050M12CM2 Datasheet, PDF (2/8 Pages) Cree, Inc – 1.2kV, 50A Silicon Carbide Six-Pack (Three Phase) Module

Electrical Characteristics (T_C = 25˚C unless otherwise specified)
Symbol
Parameter
Min.
Typ.
Max. Unit
Test Conditions
Note
V(BR)DSS Drain - Source Breakdown Voltage
VGS(th) Gate Threshold Voltage
IDSS
Zero Gate Voltage Drain Current
1.2
2.3
1.6
kV V_GS,= 0V, I_D = 100 uA
VDS = 10 V, ID = 2.5 mA
V
VDS = 10 V, ID = 2.5 mA, TJ = 150ºC
2
100 μA VDS = 1.2 kV, VGS = 0V
IGSS
Gate-Source Leakage Current
RDS(on) On State Resistance
gfs
Transconductance
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
25
43
22
21
2.810
0.393
0.014
0.5
μA V_GS,= 20 V, VDS = 0V
34
63
VGS = 20 V, ID = 50 A
mΩ
VGS = 20 V, ID = 50 A, TJ = 150ºC
Fig. 4
5,6,7
VDS = 20 V, ID = 50 A
S
Fig. 8
VDS = 20 V, ID = 50 A, TJ = 150ºC
VDS = 800V, VGS = 0V
nF
f = 1MHz, V_AC = 25mV
Fig.
16,17
EON
Tur n- On Swi t ching En er gy
EOff
Turn-Off Switching Energy

R_G
Internal Gate Resistance
1.1
mJ ^{VDD = 600V, VGS = +20V/-5V}
ID = 50A, RG = 20Ω
Inductive Load = 200 μH
Fig. 18
0.6
mJ _{Note: IEC 60747-8-4 Definitions}
1.5
Ω f = 1MHz, VAC = 25mV
QG
Gate Charge
180
nC VDD= 800V, ID= 50A
Fig. 15
Resistive Switching
td(on)
tr(on)
td(off)
Turn-on delay time
V_SD fall time 90% to 10%
Turn-off delay time
tf(off)
V_SD rise time 10% to 90%
21
ns
30
ns
V_DD = 800V,R_LOAD = 8 Ω
V_GS = +20/-2V, R_G = 3.8 Ω
50
ns ^{Note: IEC 60747-8-4 Definitions}
19
ns
Module Application Note: The SiC MOSFET module switches at speeds beyond what is customarily associated with IGBT based
modules. Therefore, special precautions are required to realize the best performance. The interconnection between the gate driver and
module housing needs to be as short as possible.This will afford the best switching time and avoid the potential for device oscillation.
Also, great care is required to insure minimum inductance between the module and link capacitors to avoid excessive V_DS overshoots.
2
CCS050M12CM2,Rev. -