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| CCS050M12CM2 Datasheet, PDF (1/8 Pages) Cree, Inc – 1.2kV, 50A Silicon Carbide Six-Pack (Three Phase) Module | |||
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CCS050M12CM2
1.2kV, 50A Silicon Carbide
Six-Pack (Three Phase) Module
Z-FETTM MOSFET and Z-RecTM Diode
Features
⢠Ultra Low Loss
⢠Zero Reverse Recovery Current
⢠Zero Turn-off Tail Current
⢠High-Frequency Operation
â¢
â¢
Positive Temperature Coefficient on VF and VDS(on)
Cu Baseplate, AIN DBC
System Benefits
⢠Enables Compact and Lightweight Systems
⢠High Efficiency Operation
⢠Ease of Transistor Gate Control
⢠Reduced Cooling Requirements
⢠Reduced System Cost
Applications
⢠Solar Inverters
⢠UPS and SMPS
⢠Induction Heating
⢠Regen Drives
⢠3-Phase PFC
⢠Motor Drives
VDS 1.2 kV
ID (TC = 100ËC)
50 A
RDS(on) (TJ = 25ËC)
25 mâ¦
EOFF (TJ = 150ËC)
0.6 mJ
Package
Part Number
CCS050M12CM2
Package
Six-Pack
Marking
CCS050M12CM2
Maximum Ratings (TC = 25ËC unless otherwise specified)
Symbol
Parameter
Value
Unit
Test Conditions
VDS
Drain - Source Voltage
VGS
Gate - Source Voltage
ID
Continuous Drain Current
ID(pulse)
Pulsed Drain Current
TJ
Junction Temperature
TC ,TSTG
Visol
Case and Storage Temperature Range
Case Isolation Voltage
LStray
Stray Inductance
M
Mounting Torque
G
Weight
PD
Power Dissipation
1.2
+25/-10
87
50
250
150
kV
V
VGS = 20V, TC=25ËC
A
VGS = 20V, TC=100ËC
A
Pulse width tP = 50 μA
Rate limited by Tjmax,TC = 25ËC
ËC
-40 to +150 ËC
2.5
kV DC, t=1min
30
nH Measured from pins 20 to 21
5.0
Nm
180
g
337
W TC = 25ºC, TJ < 150ºC
Subject to change without notice.
www.cree.com
Notes
Fig. 21
1
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